Removal liquid and method for removing oxide of group III-V element, treatment liquid for treating compound of group III-V element, oxidation prevention liquid for preventing oxidation of group III-V element, treatment liquid for treating semiconductor substrate, and method for producing semiconductor substrate product

Patent metadata

Field	Value
Publication number	US-11145514-B2
Application number	US-201715647351-A
Country	US
Kind code	B2
Filing date	Jul 12, 2017
Priority date	Feb 12, 2015
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

First claim

What is claimed is:

1. A removal liquid for removing an oxide of a Group III-V element, comprising:
hydrochloric acid or hydrofluoric acid; and
a mercapto compound represented by the following Formula (1) or (4)

where R 1 to R 5 are each independently a hydrogen atom, a thiol group, a hydroxyl group, a carboxyl group, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group, and R 1 to R 5 may be bonded to one another to form a ring;
m and n are an integer and m+n is an integer of 1 to 12;
one or more of R 1 to R 5 in a molecule are present as a carboxyl group;
A is a carboxyl group or a hydroxyl group;
R 6 is an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group;
HA represents a structure obtained by removing m3+n3+p3 number of hydrogen atoms from a pyridine ring; and
n3 is an integer of 1 to 4 and m3 is an integer of 0 to 5, and p3 is an integer of 1 to 4,
wherein the content of the acid if 0.05 mass% or more and 20 mass% or less,
the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

2. The removal liquid according to claim 1 , wherein the mercapto compound contains at least one of a carboxyl group or a hydroxyl group, and a thiol group.

3. The removal liquid according to claim 1 , wherein the mercapto compound has 1 to 12 carbon atoms and one or more and four or less thiol groups within a molecule.

4. The removal liquid according to claim 1 , which comprises hydrochloric acid.

5. The removal liquid according to claim 1 , wherein the elution of a Group III-V element is suppressed or prevented and an oxide of a Group III-V element is removed.

6. The removal liquid according to claim 1 , wherein the Group III-V element is at least one selected from In, Ga, As, and P.

7. The removal liquid according to claim 4 , wherein the concentration of hydrochloric acid in the liquid is 0.1 mass% or more 10 mass% or less.

8. The removal liquid according to claim 1 , wherein the content ratio of the content of the mercapto compound/the content of hydrochloric acid or hydrofluoric acid is 0.3 to 150.

9. The removal liquid according to claim 4 , wherein the content ratio of the content of the mercapto compound/the content of hydrochloric acid is 0.3 to 150.

10. A treatment liquid for treating a semiconductor substrate, comprising:
an acid; and
a mercapto compound having 3 to 12 carbon atoms,
wherein the mercapto compound contains a thiol group and at least one of a carboxyl group,
the content of the acid is 0.05 mass% or more and 20 mass% or less,
the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

11. The treatment liquid according to claim 10 , wherein the acid is hydrochloric acid.

12. The treatment liquid according to claim 11 , wherein the concentration of hydrochloric acid in the liquid is 0.1 mass% or more and 10 mass% or less.

13. The treatment liquid according to claim 10 , wherein the content ratio of the content of the mercapto compound/the content of the acid is 0.3 to 150.

14. The treatment liquid according to claim 11 , wherein the content ratio of the content of the mercapto compound/the content of hydrochloric acid is 0.3 to 150.

15. A removal method for removing an oxide of a Group III-V element, comprising:
applying a treatment liquid containing an acid and a mercapto compound to an oxide of a Group III-V element to remove the oxide of a Group III-V element,
wherein the mercapto compound is represented by the following Formula (1) or (4)

where R 1 to R 5 are each independently a hydrogen atom, a thiol group, a hydroxyl group, a carboxyl group, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group, and R 1 to R 5 may be bonded to one another to form a ring;
m and n are an integer and m+n is an integer of 1 to 12;
one or more of R 1 to R 5 in a molecule are present as a carboxyl group or a hydroxyl group;
A is a carboxyl group or a hydroxyl group;
R 6 is an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group;
HA represents a structure obtained by removing m3+n3+p3 number of hydrogen atoms from a pyridine ring; and
n3 is an integer of 1 to 4 and m3 is an integer of 0 to 5, and p3 is an integer of 1 to 4,
wherein the treatment is carried out under a condition that light of 500 nm or less is blocked.

16. The removal method according to claim 15 , wherein the elution of a Group III-V element is suppressed or prevented and an oxide of a Group III-V element is removed.

17. The removal method according to claim 15 , wherein one or more of R 1 to R 5 in a molecule are present as a carboxyl group.

18. A method for producing a semiconductor substrate product free of an oxide film of a Group III-V element, which comprises providing a semiconductor substrate product having thereon a film of a Group III-V element, and an oxide film of a Group III-V element formed on the film of the Group III-V element, and removing the oxide film of a Group III-V element from the semiconductor substrate product by the removal method according to claim 15 .

19. A treatment liquid for treating a compound of a Group III-V element, comprising:
hydrochloric acid or hydrofluoric acid; and
a mercapto compound,
wherein the mercapto compound contains a thiol group and at least one carboxyl group,
the content of the acid is 0.05 mass% or more and 20 mass% or less,
the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

20. The treatment liquid according to claim 19 , which comprises hydrochloric acid.

21. The treatment liquid according to claim 20 , wherein the concentration of hydrochloric acid in the liquid is 0.1 mass% or more and 10 mass% or less.

22. The treatment liquid according to claim 19 , wherein the content ratio of the content of the mercapto compound/the content of hydrochloric acid or hydrofluoric acid 0.3 to 150.

23. The treatment liquid according to claim 20 , wherein the content ratio of the content of the mercapto compound/the content of hydrochloric acid is 0.3 to 150.

24. An oxidation prevention liquid for preventing the oxidation of a Group III-V element, comprising:
hydrochloric acid or hydrofluoric acid; and
a mercapto compound,
wherein the mercapto compound contains a thiol group and at least one carboxyl group,
the content of the acid is 0.05 mass% or more and 20 mass% or less,
the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
a content ratio in terms of mass ratio be

Assignees

• Fujifilm Corp

Inventors

• Takahashi Satomi
• Bak Seongmu
• Mizutani Atsushi
• Inaba Tadashi

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/283

  by chemical means · CPC title