Wafer producing method

Patent metadata

Field	Value
Publication number	US-9789565-B2
Application number	US-201514953718-A
Country	US
Kind code	B2
Filing date	Nov 30, 2015
Priority date	Dec 4, 2014
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot includes a separation start point forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. In the separation start point forming step, the laser beam is applied to the ingot plural times with the focal point of the laser beam set at the modified layer previously formed, thereby separating the cracks from the modified layer.

First claim

What is claimed is:

1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface, a second surface opposite to the first surface, a c-axis extending from the first surface to the second surface, and a c-plane perpendicular to the c-axis, the wafer producing method comprising:
a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; and
a wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from ingot;
the separation start point forming step including
a modified layer forming step of relatively moving the focal point of the laser beam in a first direction perpendicular to a second direction where the c-axis is inclined by an off angle with respect to a normal to the first surface and the off angle is formed between the first surface and the c-plane, thereby linearly forming the modified layer extending in the first direction, and
an indexing step of relatively moving the focal point in the second direction to thereby index the focal point by a predetermined amount;

wherein in the separation start point forming step, the laser beam is applied to the ingot plural times in a condition where the focal point of the laser beam is set at the modified layer previously formed, thereby separating the cracks from the modified layer.

2. The wafer producing method according to claim 1 , wherein the hexagonal single crystal ingot is selected from an SiC single crystal ingot and a GaN single crystal ingot.

Assignees

• Disco Corp

Inventors

• Hirata Kazuya
• Takahashi Kunimitsu
• Nishino Yoko

Classifications

• C30B33/06

  Joining of crystals · CPC title

• B28D5/0011 Primary

  with preliminary treatment, e.g. weakening by scoring · CPC title

• B23K26/55

  for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns · CPC title

• B23K26/0853

  Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane · CPC title

• B23K26/0823

  Devices involving rotation of the workpiece · CPC title