Liquid processing method, memory medium and liquid processing apparatus

Patent metadata

Field	Value
Publication number	US-9786488-B2
Application number	US-201514870609-A
Country	US
Kind code	B2
Filing date	Sep 30, 2015
Priority date	Oct 1, 2014
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A liquid processing method for liquid-processing a substrate includes setting a substrate on a substrate holding device which rotates the substrate such that the substrate is held in horizontal position, supplying processing liquid to center portion of the substrate such that the center portion positioned center side with respect to peripheral portion of the substrate is liquid-processed, positioning a discharge port of a processing liquid nozzle toward downstream side in rotation direction such that the liquid is discharged to the peripheral portion obliquely to surface of the substrate and along tangential direction of the substrate while the substrate is rotated, and discharging gas from a gas nozzle perpendicularly to the surface of the substrate toward position that is adjacent to liquid landing position of the liquid on the surface of the substrate and is on the center side of the substrate, while the liquid is discharged to the peripheral portion.

First claim

What is claimed is:

1. A liquid processing method for liquid-processing a substrate, comprising:
setting a substrate on a substrate holding device configured to rotate the substrate while the substrate is held in a horizontal position;
supplying a processing liquid to a center portion of the substrate such that the center portion is liquid-processed;
positioning a discharge port of a processing liquid nozzle relative to a surface of the substrate and discharging the processing liquid from the discharge port onto the surface of the substrate while the substrate is rotated, wherein the discharge port of the processing liquid nozzle is angled such that the processing liquid is discharged from the discharge port at an oblique angle relative to the surface of the substrate, the processing liquid lands on the surface of the substrate at a landing point, the oblique angle is in a plane that is parallel or substantially parallel to a tangential line tangent to an edge of the substrate at an edge point, the edge point is located on a plane that includes the center of the substrate and the landing point, and the plane that includes the center of the substrate, the landing point, and the edge point is orthogonal to the surface of the substrate; and
while the processing liquid is discharged from the discharge port, discharging a gas from a gas nozzle perpendicularly with respect to the surface of the substrate toward a position that is adjacent to the landing point, and wherein the position towards which the gas is discharged is closer to the center of the substrate than the landing point.

2. A liquid processing method for liquid-processing a substrate according to claim 1 , wherein the positioning of the discharge port comprises moving the processing liquid nozzle from the center portion of the substrate toward a periphery of the substrate, and the discharging of the gas comprises moving the gas nozzle from the center portion of the substrate toward the periphery of the substrate.

3. A liquid processing method for liquid-processing a substrate according to claim 1 , wherein the processing liquid is a cleaning liquid, and the positioning of the discharge port and the discharging of the gas comprise positioning the discharge port and discharging the gas such that the cleaning liquid cleans the surface of the substrate.

4. A liquid processing method for liquid-processing a substrate according to claim 3 , wherein the positioning of the discharge port and the discharging of the gas comprise positioning the discharge port and discharging the gas such that the cleaning liquid removes a reaction product resulted from a reaction between a liquid developer and a film developed by the liquid developer.

5. A liquid processing method for liquid-processing a substrate according to claim 1 , wherein the processing liquid is a liquid developer, the supplying of the processing liquid comprises supplying the liquid developer to the center portion of the substrate such that the liquid developer is supplied across the surface of the substrate, and the positioning of the discharge port and the discharging of the gas comprise positioning the discharge port and discharging the gas such that the liquid developer is supplied locally with respect to a periphery of the substrate.

6. A liquid processing method for liquid-processing a substrate according to claim 1 , wherein the processing liquid nozzle and the gas nozzle are positioned on a nozzle holding device, and the positioning of the discharge port and the discharging of the gas comprise engaging a moving device configured to move the nozzle holding device such that the nozzle holding device is moved.

7. A liquid processing method for liquid-processing a substrate according to claim 1 , wherein the positioning of the discharge port comprises setting the discharge nozzle such that a discharging direction of the processing liquid forms an angle in a range of 16 degrees to 24 degrees with respect to the surface of the substrate.

8. A liquid processing method for liquid-processing a substrate according to claim 1 , wherein the positioning of the discharge port and the discharging of the gas comprise rotating the substrate such that a circumferential speed of a liquid landing position of the processing liquid is in a range of 12 m/second to 36 m/second.

9. A liquid processing method for liquid-processing a substrate according to claim 1 , wherein the positioning of the discharge port comprises discharging the processing liquid at a discharge flow rate in a range of 10 ml/minute to 50 ml/minute.

10. A liquid processing method for liquid-processing a substrate according to claim 1 , wherein the processing liquid is an organic solvent.

11. A liquid processing method for liquid-processing a substrate according to claim 2 , wherein the processing liquid is a cleaning liquid, and the positioning of the discharge port and the discharging of the gas comprise positioning the discharge port and discharging the gas such that the cleaning liquid cleans the surface of the substrate.

12. A liquid processing method for liquid-processing a substrate according to claim 11 , wherein the positioning of the discharge port and the discharging of the gas comprise positioning the discharge port and discharging the gas such that the cleaning liquid removes a reaction product resulted from a reaction between a liquid developer and a film developed by the liquid developer.

13. A liquid processing method for liquid-processing a substrate according to claim 2 , wherein the processing liquid is a liquid developer, the supplying of the processing liquid comprises supplying the liquid developer to the center portion of the substrate such that the liquid developer is supplied across the surface of the substrate, and the positioning of the discharge port and the discharging of the gas comprise positioning the discharge port and discharging the gas such that the liquid developer is supplied locally with respect to a periphery of the substrate.

14. A liquid processing method for liquid-processing a substrate according to claim 2 , wherein the processing liquid nozzle and the gas nozzle are positioned on a nozzle holding device, and the positioning of the discharge port and the discharging of the gas comprise engaging a moving device configured to move the nozzle holding device such that the nozzle holding device is moved.

15. A liquid processing method for liquid-processing a substrate according to claim 2 , wherein the positioning of the discharge port comprises setting the discharge nozzle such that a discharging direction of the processing liquid forms an angle in a range of 16 degrees to 24 degrees with respect to the surface of the substrate.

Assignees

• Tokyo Electron Ltd

Inventors

• Kai Akiko
• Niwa Takafumi
• Takahashi Shogo
• Nishihata Hiroshi
• Terashita Yuichi
• Kodama Teruhiko

Classifications

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P50/287

  by chemical means · CPC title