Sputtering target with backside cooling grooves

US9779920B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9779920-B2
Application numberUS-201414456014-A
CountryUS
Kind codeB2
Filing dateAug 11, 2014
Priority dateAug 14, 2013
Publication dateOct 3, 2017
Grant dateOct 3, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

First claim

Opening claim text (preview).

The invention claimed is: 1. A sputtering target for a sputtering chamber, the sputtering target comprising: a circular sputtering plate, comprising: a sputtering surface; a backside surface opposite the sputtering surface, wherein the backside surface has radially inner, middle and outer regions, the backside surface having: a plurality of circular grooves which are spaced apart from one another; and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of the sputtering plate; an annular back surface opposite the sputtering surface; an inclined outer peripheral wall that extends from an outer edge of the sputtering surface to an outer edge of the annular back surface; an inner peripheral wall that extends from the backside surface to an inner edge of the annular back surface, wherein a recess that exposes the backside surface of the sputtering plate is defined by the backside surface and the inner peripheral wall; and an annular-shaped backing plate mounted to the sputtering plate, wherein the annular-shaped backing plate comprises: an annular-shaped body that defines an open annulus exposing the backside surface of the sputtering plate, the annular-shaped body defined by: an annular front surface contacting the annular back surface of the circular sputtering plate; an annular flange that extends beyond a radius of the sputtering plate, the annular flange comprising a peripheral circular surface having an outer footing for resting on a surface; and an inner peripheral wall that extends from an inner edge of the annular front surface to the annular flange and aligns with the inner peripheral wall of the circular sputtering plate. 2. The sputtering target of claim 1 , wherein the circular grooves are concentric grooves. 3. The sputtering target of claim 2 , wherein the circular grooves comprise from about 20 to about 30 grooves. 4. The sputtering target of claim 1 , wherein all of the circular grooves are located at the radially middle region of the backside surface. 5. The sputtering target of claim 1 , wherein the backside surface has at least 8 arcuate channels. 6. The sputtering target of claim 5 , wherein the arcuate channels are spaced apart from one another by an angle of from about 30 to about 90 degrees as measured from a center of the backside surface. 7. The sputtering target of claim 1 , wherein the annular-shaped backing plate comprises an alloy of copper and chrome. 8. The sputtering target of claim 1 , wherein the annular-shaped backing plate consists of a first material selected from Al 0.5 Cu, Al 1.0 Si, Al 0.5 Cu 1.0 Si, aluminum, copper, chrome, titanium, tungsten, molybdenum, cobalt, tantalum, Li—P—O—N, germanium, GeS 2 , silicon, SiO 2 , quartz, and combinations thereof. 9. The sputtering target of claim 8 wherein the sputtering plate is composed of a second material selected from titanium or titanium nitride and the first material is different from the second material. 10. The sputtering target of claim 1 , further comprising a heat exchanger housing capable of holding a heat transfer fluid about the backside surface of the circular sputtering plate, and a plurality of rotatable magnets within the housing. 11. A sputtering chamber, comprising: a sputtering target mounted in the sputtering chamber, comprising: a circular sputtering plate, comprising: a sputtering surface; a backside surface opposite the sputtering surface, wherein the backside surface has radially inner, middle and outer regions, the backside surface having: a plurality of circular grooves which are spaced apart from one another; and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate; an annular back surface opposite the sputtering surface; an inclined outer peripheral wall that extends from an outer edge of the sputtering surface to an outer edge of the annular back surface; an inner peripheral wall that extends from the backside surface to an inner edge of the annular back surface, wherein a recess that exposes the backside surface of the circular sputtering plate is defined by the backside surface and the inner peripheral wall; and an annular-shaped body that defines an open annulus exposing the backside surface of the sputtering plate, the annular-shaped body defined by: an annular front surface contacting the annular back surface of the sputtering plate; an annular flange that extends beyond a radius of the sputtering plate, the annular flange comprising a peripheral circular surface having an outer footing for resting on a surface; and an inner peripheral wall that extends from an inner edge of the annular front surface to the annular flange and aligns with the inner peripheral wall of the circular sputtering plate; a substrate support facing the sputtering target; a gas distributor to introduce a gas into the sputtering chamber; a gas energizer to energize the gas to form a plasma to sputter the sputtering target; and a gas exhaust port to exhaust gas from the sputtering chamber, wherein the sputtering target comprises a first material and the annular-shaped backing plate comprises a second material different from the first material. 12. The sputtering chamber of claim 11 , wherein the circular grooves are concentric grooves. 13. The sputtering chamber of claim 12 wherein all the circular grooves are located at the radially middle region of the backside surface. 14. The sputtering chamber of claim 11 wherein the backside surface has at least about 8 arcuate channels. 15. The sputtering chamber of claim 11 wherein the arcuate channels are spaced apart from one another by an angle of from about 30 to about 90 degrees as measured from a center of the backside surface. 16. A magnetron sputtering target assembly for a sputtering chamber, the sputtering target assembly comprising: a heat exchanger housing capable of holding heat transfer fluid about a plurality of rotatable magnets; and a sputtering target abutting the housing such that the heat transfer fluid contacts a backside surface of the sputtering target, the sputtering target comprising: a circular sputtering plate, comprising: a sputtering surface; the backside surface opposite the sputtering surface, wherein the backside surface has radially inner, middle and outer regions, the backside surface having: a plurality of circular grooves which are spaced apart from one another; and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of the sputtering plate; an annular back surface opposite the sputtering surface; an inclined outer peripheral wall that extends from an outer edge of the sputtering surface to an outer edge of the annular back surface; an inner peripheral wall that extends from the backside surface to an inner edge of the annular back surface, wherein a recess that exposes the backside surface of the circular sputtering plate is defined by the backside surface and the inner peripheral wall; and an annular-shaped backing plate mounted to the sputtering plate, wherein the annular-shaped backing plate comprises: an annular-shaped body that defines an open annulus exposing the backside surface of the sputtering plate, the annular-shaped body defined by: an annular front surface contacting the annular back surface of the circular sputtering plate; an annular flange that extends beyond a radius of the

Assignees

Inventors

Classifications

  • Manufacturing of targets · CPC title

  • Plural materials · CPC title

  • Target holders (includes backing plates and endblocks) · CPC title

  • Temperature of target · CPC title

  • by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

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What does patent US9779920B2 cover?
Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H01J37/3405. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 03 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).