Method for evaluating concentration of defect in silicon single crystal substrate

Patent metadata

Field	Value
Publication number	US-9773710-B2
Application number	US-201415036915-A
Country	US
Kind code	B2
Filing date	Nov 12, 2014
Priority date	Dec 10, 2013
Publication date	Sep 26, 2017
Grant date	Sep 26, 2017

Abstract

A method for evaluating concentration of defect in silicon single crystal substrate, defect being formed by particle beam irradiation in silicon single crystal substrate, including the steps of: measuring a resistivity of silicon single crystal substrate, followed by irradiating silicon single crystal substrate with particle beam, re-measuring resistivity of silicon single crystal substrate after irradiation; determining each carrier concentration in silicon single crystal substrate before and after irradiation on basis of measured results of resistivity before and after particle beam irradiation to calculate rate of change of carrier concentration; and evaluating concentration of VV defect on basis of rate of change of carrier concentration, VV defect being made of a silicon atom vacancy and being formed by particle beam irradiation in silicon single crystal substrate. The method can simply evaluate concentration of VV defect formed in silicon single crystal substrate by particle beam irradiation.

First claim

The invention claimed is:

1. A method for evaluating a concentration of a defect in a silicon single crystal substrate, the defect being formed by particle beam irradiation in the silicon single crystal substrate, comprising the steps of:
measuring a resistivity of the silicon single crystal substrate, followed by irradiating the silicon single crystal substrate with the particle beam, re-measuring resistivity of the silicon single crystal substrate after the irradiation;
determining each carrier concentration in the silicon single crystal substrate before and after the irradiation on the basis of the measured results of resistivity before and after the particle beam irradiation to calculate a rate of change of the carrier concentration; and
evaluating a concentration of a VV defect on the basis of the rate of the change of the carrier concentration, the VV defect being comprised of a silicon atom vacancy and being formed by the particle beam irradiation in the silicon single crystal substrate.

2. The method for evaluating a concentration of a defect in a silicon single crystal substrate according to claim 1 , wherein the particle beam to irradiate the silicon single crystal substrate is composed of an electron or an ion.

3. The method for evaluating a concentration of a defect in a silicon single crystal substrate according to claim 2 , wherein a dopant impurity contained in the silicon single crystal substrate is any of phosphorous, arsenic, and antimony.

4. The method for evaluating a concentration of a defect in a silicon single crystal substrate according to claim 3 , further comprising the steps of:
preparing a silicon single crystal substrate for pre-examination with a pre-evaluated concentration of the VV defect separately from the silicon single crystal substrate to be evaluated;
determining a correlation on the basis of the pre-evaluated concentration of the VV defect and a rate of change of a carrier concentration before and after the particle beam irradiation with respect to the silicon single crystal substrate for pre-examination; and
irradiating the silicon single crystal substrate to be evaluated with the particle beam to evaluate the concentration of the VV defect by using the correlation.

5. The method for evaluating a concentration of a defect in a silicon single crystal substrate according to claim 2 , further comprising the steps of:
preparing a silicon single crystal substrate for pre-examination with a pre-evaluated concentration of the VV defect separately from the silicon single crystal substrate to be evaluated;
determining a correlation on the basis of the pre-evaluated concentration of the VV defect and a rate of change of a carrier concentration before and after the particle beam irradiation with respect to the silicon single crystal substrate for pre-examination; and
irradiating the silicon single crystal substrate to be evaluated with the particle beam to evaluate the concentration of the VV defect by using the correlation.

6. The method for evaluating a concentration of a defect in a silicon single crystal substrate according to claim 1 , wherein a dopant impurity contained in the silicon single crystal substrate is any of phosphorous, arsenic, and antimony.

7. The method for evaluating a concentration of a defect in a silicon single crystal substrate according to claim 6 , further comprising the steps of:
preparing a silicon single crystal substrate for pre-examination with a pre-evaluated concentration of the VV defect separately from the silicon single crystal substrate to be evaluated;
determining a correlation on the basis of the pre-evaluated concentration of the VV defect and a rate of change of a carrier concentration before and after the particle beam irradiation with respect to the silicon single crystal substrate for pre-examination; and
irradiating the silicon single crystal substrate to be evaluated with the particle beam to evaluate the concentration of the VV defect by using the correlation.

8. The method for evaluating a concentration of a defect in a silicon single crystal substrate according to claim 1 , further comprising the steps of:
preparing a silicon single crystal substrate for pre-examination with a pre-evaluated concentration of the VV defect separately from the silicon single crystal substrate to be evaluated;
determining a correlation on the basis of the pre-evaluated concentration of the VV defect and a rate of change of a carrier concentration before and after the particle beam irradiation with respect to the silicon single crystal substrate for pre-examination; and
irradiating the silicon single crystal substrate to be evaluated with the particle beam to evaluate the concentration of the VV defect by using the correlation.

Assignees

• Shinetsu Handotai Kk

Inventors

• Kamada Hiroyuki
• Hoshi Ryoji

Classifications

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01N27/04

  by investigating resistance · CPC title

• G01N27/041

  of a solid body · CPC title

• G01N15/06

  Investigating concentration of particle suspensions (by weighing G01N5/00; investigating sedimentation of particle suspensions G01N15/04; investigating individual particles G01N15/10) · CPC title