Method for evaluating concentration of defect in silicon single crystal substrate
US-9773710-B2 · Sep 26, 2017 · US
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Patent family 53370819
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 53370819 |
| Family type | — |
| Earliest priority | Dec 10, 2013 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US9773710B2 — Method for evaluating concentration of defect in silicon single crystal substrate |
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US9773710B2 — Method for evaluating concentration of defect in silicon single crystal substrate (published Sep 26, 2017)
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