Processing method of optical device wafer

Patent metadata

Field	Value
Publication number	US-9761492-B2
Application number	US-201615291746-A
Country	US
Kind code	B2
Filing date	Oct 12, 2016
Priority date	Oct 13, 2015
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

A processing method for optical device wafers includes a shielded tunnel forming step and a dividing step. In the shielded tunnel forming step, a sapphire substrate is irradiated with a pulse laser beam having such a wavelength as to be transmitted through the sapphire substrate along regions corresponding to planned dividing lines. The light focus point of the beam is positioned inside the substrate from the back surface side of the substrate. Fine pores and amorphous regions that shield the fine pores form shielded tunnels along the planned dividing lines. In the dividing step, an external force is applied to the optical device wafer, and the optical device wafer is divided into individual optical device chips along the planned dividing lines. In the shielded tunnel forming step, a spherical aberration is generated by causing the laser beam to be incident on a condensing lens with a divergence angle.

First claim

What is claimed is:

1. A processing method of an optical device wafer in which an optical device wafer obtained by forming a light emitting layer on a surface of a sapphire substrate and forming an optical device in each of a plurality of regions marked out by a plurality of planned dividing lines in a lattice manner is divided into individual optical device chips, the processing method comprising:
a shielded tunnel forming step of irradiating the sapphire substrate with a pulse laser beam having such a wavelength as to be transmitted through the sapphire substrate along regions corresponding to the planned dividing lines in such a manner that a light focus point of the pulse laser beam is positioned inside the sapphire substrate from a back surface side of the sapphire substrate, and growing fine pores and amorphous regions that shield the fine pores to form shielded tunnels along the planned dividing lines, wherein in the shielded tunnel forming step, the pulse laser beam is caused to have the divergence angle by a concave lens disposed on an upstream side of the condensing lens; and
a dividing step of giving an external force to the optical device wafer for which the shielded tunnel forming step has been carried out, and dividing the optical device wafer into the individual optical device chips along the planned dividing lines,
wherein in the shielded tunnel forming step, a spherical aberration is generated in the pulse laser beam after passing through a condensing lens by causing the pulse laser beam to be incident on the condensing lens with a divergence angle.

2. The processing method of an optical device according to claim 1 ,
wherein focal length of the concave lens is set to −0.1 m to −5 m.

Assignees

• Disco Corp

Inventors

• Shotokuji Takumi
• Takeda Noboru
• Kirihara Naotoshi

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H01L33/0075

  Electricity · mapped topic

• H01L2933/0033

  Electricity · mapped topic

• H01L21/78 Primary

  Electricity · mapped topic