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Method for forming shield tunnels in single-crystal substrates
US9543466B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9543466-B2 |
| Application number | US-201615013041-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 2, 2016 |
| Priority date | Feb 2, 2015 |
| Publication date | Jan 10, 2017 |
| Grant date | Jan 10, 2017 |
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- Title
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Abstract
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A method of processing a single-crystal member includes setting the peak energy density of a pulsed laser beam to a value in a range from 1 TW/cm 2 to 100 TW/cm 2 , and applying the pulsed laser beam to the single-crystal member while positioning a converged point of the pulsed laser beam at a predetermined position spaced from an upper side of the single-crystal member to grow a fine hole and a amorphous region shielding the fine hole from the upper side of the single-crystal member, thereby forming a shield tunnel in the single-crystal member.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of processing a single-crystal member, comprising: setting a peak energy density of a pulsed laser beam to a value in a range from 1 TW/cm 2 to 100 TW/cm 2 ; and applying the pulsed laser beam to the single-crystal member while positioning a converged point of the pulsed laser beam at a predetermined position spaced from an upper side of the single-crystal member to grow a fine hole and an amorphous region shielding the fine hole from the upper side of the single-crystal member, thereby forming a shield tunnel in the single-crystal member. 2. The method of processing a single-crystal member according to claim 1 , further comprising: continuously forming the shield tunnels along a plurality of division lines formed on the single-crystal member; and dividing the single-crystal member along the division lines with the shield tunnels continuously formed therealong.
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Classifications
Cutting or separating of wafers, substrates or parts of devices · CPC title
Auxiliary operations or equipment · CPC title
involving non-metallic material, e.g. isolators · CPC title
comprising lenses · CPC title
being semiconducting · CPC title
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- What does patent US9543466B2 cover?
- A method of processing a single-crystal member includes setting the peak energy density of a pulsed laser beam to a value in a range from 1 TW/cm 2 to 100 TW/cm 2 , and applying the pulsed laser beam to the single-crystal member while positioning a converged point of the pulsed laser beam at a predetermined position spaced from an upper side of the single-crystal member to grow a fine hole and…
- Who is the assignee on this patent?
- Disco Corp
- What technology area does this patent fall under?
- Primary CPC classification B23K26/38. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Jan 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).