Wafer processing method using pulsed laser beam to form shield tunnels along division lines of a semiconductor wafer

Patent metadata

Field	Value
Publication number	US-9536786-B2
Application number	US-201514926308-A
Country	US
Kind code	B2
Filing date	Oct 29, 2015
Priority date	Nov 5, 2014
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

A wafer is formed with a plurality of division lines on a front surface of a single crystal substrate having an off angle and formed with devices in a plurality of regions partitioned by the division lines. The wafer is processed by setting a numerical aperture (NA) of a focusing lens for focusing a pulsed laser beam so that a value obtained by dividing the numerical aperture (NA) by a refractive index (N) of the single crystal substrate falls within the range from 0.05 to 0.2. The pulsed laser beam is applied along the division lines, with a focal point of the pulsed laser beam positioned at a desired position from a back surface of the single crystal substrate, so as to form shield tunnels each composed of a pore and a pore-shielding amorphous portion along the division lines from the focal point positioned inside the single crystal substrate.

First claim

What is claimed is:

1. A method of processing a wafer formed with a plurality of division lines on a front surface of a single crystal semiconductor substrate having an off angle and formed with respective devices in a plurality of regions partitioned by the division lines, the method comprising:
a numerical aperture setting step of setting a numerical aperture (NA) of a focusing lens for focusing a pulsed laser beam so that a value obtained by dividing the numerical aperture (NA) by a refractive index (N) of the single crystal semiconductor substrate falls within range from 0.05 to 0.2;
a shield tunnel forming step of applying the pulsed laser beam along the division lines from a back side of the single crystal semiconductor substrate, with a focal point of the pulsed laser beam positioned at a desired position from a back surface of the single crystal semiconductor substrate, so as to form shield tunnels each composed of a pore and a pore-shielding amorphous portion along the division lines from the focal point positioned inside the single crystal semiconductor substrate; and
a wafer dividing step of applying an external force to the wafer having been subjected to the shield tunnel forming step so as to divide the wafer along the division lines, along which the shield tunnels have been formed, into individual device chips;
wherein a film is provided to coat surfaces of the plurality of division lines formed on the front surface of the single crystal semiconductor substrate constituting the wafer, and the method further comprises a film splitting step of applying a laser beam with such a wavelength as to be absorbed in the film to the film along the division lines so as to split the film along the division lines, before the wafer diving step is performed.

2. The method of processing a wafer according to claim 1 , further comprising a wafer supporting step of attaching a dicing tape to a back surface of the wafer and supporting an outer peripheral portion of the dicing tape by an annular frame, after the shield tunnel forming step is performed and before the wafer dividing step is performed.

Assignees

• Disco Corp

Inventors

• Morikazu Hiroshi
• Shimada Motohiko

Classifications

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7418

  of passive members, e.g. a chip mounting substrate · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title