CMP method for suppression of titanium nitride and titanium/titanium nitride removal

Patent metadata

Field	Value
Publication number	US-9752057-B2
Application number	US-201514616250-A
Country	US
Kind code	B2
Filing date	Feb 6, 2015
Priority date	Feb 5, 2014
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.

First claim

We claim:

1. A chemical mechanical polishing (CMP) method of polishing a substrate comprising a metal deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer; the method comprising contacting the substrate with an acidic CMP composition comprising a particulate abrasive suspended in a liquid carrier, wherein the particulate abrasive comprises alumina, and has a mean particle size of about 10 to about 150 nm, the liquid carrier comprising a surfactant, wherein the surfactant comprises a mixture of (C10-C14) alkylbenzene and ethoxylated (C6-C12) alcohols, wherein the surfactant suppresses a rate at which the TiN and Ti/TiN is polished, and wherein pH of the composition is in the range of about 2 to about 5.

2. The method of claim 1 wherein the particulate abrasive is present in the CMP composition at a concentration of about 0.001 to about 10 percent by weight (wt %).

3. The method of claim 1 wherein the surfactant is present in the CMP composition at a concentration in the range of about 10 to about 50,000 parts-per-million (ppm).

4. The method of claim 1 wherein the CMP composition further comprises an oxidizing agent.

5. The method of claim 4 wherein the oxidizing agent comprises hydrogen peroxide.

6. The method of claim 5 wherein the hydrogen peroxide is present in the CMP composition at a concentration in the range of about 0.01 to about 5 wt %.

7. The method of claim 1 wherein the abrading is accomplished in conjunction with a polishing pad in a CMP polishing apparatus.

8. The method of claim 1 wherein the CMP composition comprises about 0.001 to about 10 wt % of the abrasive, about 10 to about 50,000 ppm of the sulfonate surfactant, and further comprising about 0.01 to about 5 wt % of hydrogen peroxide.

Assignees

• Cabot Microelectronics Corp

Inventors

• Hou Hui-Fang
• Ward William
• Yeh Ming-Chih
• Tsai Chih-Pin

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C23F3/06

  with acidic solutions · CPC title