Array substrate and method for manufacturing the same, x-ray flat panel detector, image pickup system

Patent metadata

Field	Value
Publication number	US-9735195-B2
Application number	US-201514913174-A
Country	US
Kind code	B2
Filing date	Jul 21, 2015
Priority date	Mar 3, 2015
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

First claim

The invention claimed is:

1. An array substrate, divided into a plurality of detection units, each of the detection units has a first electrode and a photoelectric conversion structure provided therein, wherein, the first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side of the photoelectric conversion structure, and is electrically connected to the photoelectric conversion structure, wherein, a reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface.

2. The array substrate according to claim 1 , wherein, the reflective layer is a conductive film layer electrically connected to the first electrode.

3. The array substrate according to claim 1 , wherein, the reflective layer and the first electrode are formed into an integral structure.

4. The array substrate according to claim 3 , wherein, the first electrode has a material including an oxide of a conductive metal, and the reflective layer is formed of an elementary substance of the metal.

5. The array substrate according to claim 4 , wherein, the reflective layer is formed of an elementary substrate of the metal that is obtained by carrying out a reduction reaction on a surface of the first electrode facing the photoelectric conversion structure.

6. The array substrate according to claim 5 , wherein, the metal oxide is indium tin oxide, and the reflective layer is formed of an elementary substance tin that is obtained by carrying out reduction reaction of the indium tin oxide.

7. The array substrate according to claim 1 , wherein, one thin film transistor is further included in each of the detection units, an insulating layer is provided between the thin film transistor and the first electrode, a via hole is disposed in the insulating layer at a location corresponding to a source electrode of the thin film transistor, and the first electrode is connected to the source electrode of the thin film transistor through the via hole.

8. The array substrate according to claim 1 , wherein, the photoelectric conversion structure includes a photodiode and a second electrode, a cathode layer of the photodiode is connected to the first electrode, and an anode layer of the photodiode is connected to the second electrode.

9. An X-ray flat panel detector, comprising the array substrate according to claim 1 and an X-ray conversion layer disposed on the photoelectric conversion structure of the array substrate.

10. An image pickup system, comprising the X-ray flat panel detector according to claim 9 and a display device.

11. The image pickup system according to claim 10 , further comprising a control device, which is configured to transform an electric signal detected by the X-ray flat panel detector into an image signal, and to control the display device to display an image in correspondence with the image signal.

12. A manufacturing method of an array substrate, comprising:
dividing the array substrate into a plurality of detection units;
forming a pattern including a first electrode within each of the detection units;
forming a pattern of a conductive reflecting layer on the pattern including the first electrode; and
forming a photoelectric conversion structure on the pattern of the conductive reflecting layer,
wherein, a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface.

13. The manufacturing method according to claim 12 , wherein, forming the pattern of the conductive reflecting layer includes:
forming a conductive film layer on the first electrode.

14. The manufacturing method according to claim 12 , wherein, the reflective layer and the first electrode are formed into an integral structure.

15. The manufacturing method according to claim 14 , wherein, the first electrode has a material including a conductive metal oxide, and forming the conductive reflecting layer includes:
introducing a reductive gas into a reactive chamber, so that a part of metal elementary substance in the metal oxide precipitate.

16. The manufacturing method according to claim 15 , wherein, the metal oxide is indium tin oxide.

17. The manufacturing method according to claim 16 , wherein, the reductive gas is hydrogen gas.

18. The manufacturing method according to claim 17 , wherein, a gas flux of the hydrogen gas is in a range of 20 to 500 sccm, an introducing time is in a range of 10 to 200 s, and a gas pressure of the reactive chamber is in a range of 100 to 300 mT, and an electrode power of the reactive chamber used for formation of plasma is in a range of 400 to 800 W.

19. The manufacturing method according to claim 12 , wherein, before forming the pattern including the first electrode within each of the detection units, it further includes forming a thin film transistor within each of the detection units;
forming an insulating layer on the thin film transistor; and
forming a via hole in the insulating layer at a location corresponding to a source electrode of the thin film transistor, so that the first electrode is connected to the source electrode of the thin film transistor.

20. The manufacturing method according to claim 12 , wherein, forming the photoelectric conversion structure includes:
forming a photodiode, a cathode layer of which is connected to the first electrode; and
forming a pattern including a transparent second electrode on an anode layer of the photodiode.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Shu Shi
• Gao Jincheng
• Xu Chuanxiang
• Zhang Feng

Classifications

• H01L27/1443

  Electricity · mapped topic

• H01L27/14612

  Electricity · mapped topic

• H01L31/02327

  Electricity · mapped topic

• H01L27/14629

  Electricity · mapped topic

• H01L31/022408

  Electricity · mapped topic