Thin film transistor array substrate for digital photo-detector

Patent metadata

Field	Value
Publication number	US-9269740-B2
Application number	US-201314089897-A
Country	US
Kind code	B2
Filing date	Nov 26, 2013
Priority date	Nov 27, 2012
Publication date	Feb 23, 2016
Grant date	Feb 23, 2016

Abstract

A thin film transistor array substrate for a digital photo-detector is provided. The thin film transistor array substrate includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; and a thin film transistor at each intersection between the gate lines and the data lines to turn on according to the scan signal of the gate lines and output the photoelectric conversion signal from the photodiode to the data lines. A contact area between a source electrode of the thin film transistor and a first electrode of the photodiode is at a portion outside an area covered by a photodiode region.

First claim

What is claimed is:

1. A thin film transistor array substrate for a digital photo-detector, comprising:
a plurality of gate lines to supply a scan signal;
a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines;
a photodiode in each of the cell regions to perform photoelectric conversion; and
a thin film transistor at each intersection between the gate lines and the data lines to turn on according to the scan signal of the gate lines and output the photoelectric conversion signal from the photodiode to the data lines,
wherein a contact area between a source electrode of the thin film transistor and a first electrode of the photodiode is at a portion outside an area covered by a photodiode region.

2. A thin film transistor array substrate according to claim 1 , wherein the photodiode includes the first electrode, a semiconductor layer, and a second electrode.

3. The thin film transistor array substrate according to claim 2 , wherein the first electrode extends beyond a periphery of the semiconductor layer such that the extended portion of the first electrode contacts the source electrode.

4. The thin film transistor array substrate according to claim 2 , wherein the semiconductor layer is disposed to be laterally displaced relative to the contact area between the first electrode and the source electrode such that a portion of the first electrode not covered by the semiconductor layer contacts the source electrode.

5. The thin film transistor array substrate according to claim 2 , wherein the first electrode connects to the source electrode through a contact hole, and wherein the semiconductor layer does not overlap the contact hole.

6. The thin film transistor array substrate according to claim 2 , wherein the first electrode connects to the source electrode through a contact hole, and wherein the semiconductor layer does not overlap the source electrode of the thin film transistor.

7. The thin film transistor array substrate according to claim 2 , wherein the first electrode connects to the source electrode through a contact hole, and wherein the semiconductor layer is laterally displaced relative to the contact hole.

8. The thin film transistor array substrate according to claim 1 , further comprising a bias line to apply a bias voltage to each photodiode.

9. The thin film transistor array substrate according to claim 1 , wherein the photodiode is configured to detect X-rays.

10. The thin film transistor array substrate according to claim 1 , wherein the photodiode includes a PIN diode for detecting X-rays.

Assignees

• Lg Display Co Ltd
• Lee Nan Mi

Inventors

• Kim Dae-Kyu
• Park Sung-Il
• Ha Sung-Bong

Classifications

• H10F30/29

  the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation · CPC title

• H10F39/189 Primary

  X-ray, gamma-ray or corpuscular radiation imagers · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/803

  Pixels having integrated switching, control, storage or amplification elements · CPC title

• H01L27/14658 Primary

  Electricity · mapped topic