Photosensitive capacitor pixel for image sensor

Patent metadata

Field	Value
Publication number	US-9490282-B2
Application number	US-201514662655-A
Country	US
Kind code	B2
Filing date	Mar 19, 2015
Priority date	Mar 19, 2015
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.

First claim

What is claimed is:

1. An image sensor pixel comprising:
a photosensitive capacitor comprising:
an electrode extended along an axis;
a conductive layer disposed around the electrode, wherein the conductive layer is wrapped coaxially around the electrode;
a dielectric layer formed between the conductive layer and the electrode such that the conductive layer does not contact the electrode; and
a photosensitive semiconductor material for generating an image signal in response to image light, wherein the photosensitive semiconductor material is disposed between the dielectric layer and the electrode; and

a transistor network coupled to readout the image signal from the electrode of the photosensitive capacitor.

2. The image sensor pixel of claim 1 , wherein the transistor network includes a transfer transistor having a floating diffusion and a charge storage node coupled to the electrode of the photosensitive capacitor, wherein the transfer transistor transfers image charge generated by the image signal from the charge storage node to the floating diffusion when the transfer transistor is activated.

3. The image sensor pixel of claim 2 , wherein the electrode includes a highly doped polysilicon, and wherein the charge storage node is lightly doped at a same doping polarity as the highly doped polysilicon.

4. The image sensor pixel of claim 1 , wherein the transistor network includes a source follower transistor having a gate coupled to the electrode of the photosensitive capacitor, wherein the source follower transistor generates an amplified image signal in response to the image signal on the electrode, and wherein the transistor network further includes a row select transistor coupled to transfer the amplified image signal to a readout line.

5. The image sensor pixel of claim 4 , wherein the transistor network further includes a reset transistor coupled to reset the gate of the source follower transistor when the reset transistor is activated.

6. The image sensor pixel of claim 1 , wherein the dielectric layer conforms to a shape of the conductive layer.

7. The image sensor pixel of claim 1 , wherein the dielectric layer is a high k dielectric layer.

8. The image sensor pixel of claim 1 , wherein the dielectric layer includes a negative charge layer to induce a depletion zone at an interface of the dielectric layer and the photosensitive semiconductor material.

9. The image sensor pixel of claim 8 , wherein the negative charge layer includes hafnium-aluminum-oxide.

10. The image sensor pixel of claim 1 , wherein the conductive layer is reflective to the image light.

11. The image sensor pixel of claim 1 , wherein the conductive layer forms a truncated cone, and wherein a wide end of the truncated cone is positioned to receive the image light, the wide end disposed opposite a narrower end of the truncated cone.

12. The image sensor pixel of claim 1 , wherein the photosensitive semiconductor material is doped at a gradient having an increased doping concentration in exterior portions of the photosensitive semiconductor material disposed along the dielectric layer.

13. An image sensor comprising:
a semiconductor substrate layer having a frontside and a backside;
an interconnect layer coupled along the frontside of the semiconductor substrate layer;
a pixel array for capturing images, wherein each pixel in the pixel array includes a transistor network and a photosensitive capacitor, and wherein the transistor network is disposed along the frontside of the semiconductor substrate layer and the photosensitive capacitor is disposed within the interconnect layer and positioned to be frontside illuminated, the photosensitive capacitor comprising:
an electrode extended along an axis, a conductive layer disposed around the electrode, wherein the conductive layer is wrapped coaxially around the electrode;
a dielectric layer formed between the conductive layer and the electrode; and
a photosensitive semiconductor material for generating an image signal in response to image light, wherein the photosensitive semiconductor material is disposed between the dielectric layer and the electrode, the transistor network coupled to readout the image signal from the electrode of the photosensitive capacitor.

14. The image sensor of claim 13 , wherein the dielectric layer is a high k dielectric layer.

15. The image sensor of claim 13 , wherein the dielectric layer includes a negative charge layer induce a depletion zone at an interface of the dielectric layer and the photosensitive semiconductor material.

Assignees

• Omnivision Tech Inc

Inventors

• Yang Wu-Zang
• Liu Chia-Ying
• Hsiung Chih-Wei
• Ai Chun-Yung
• Tai Dyson H
• Massetti Dominic

Classifications

• H01L27/1464

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic

• H01L27/14629

  Electricity · mapped topic

• H01L27/14612

  Electricity · mapped topic

• H01L27/14687

  Electricity · mapped topic