Array substrate and manufacturing method thereof, display device

Patent metadata

Field	Value
Publication number	US-9543331-B2
Application number	US-201414435877-A
Country	US
Kind code	B2
Filing date	Sep 20, 2014
Priority date	May 13, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

An array substrate and manufacturing method thereof, and a display device are capable of preventing light reflection from a drain electrode, and guaranteeing the display effect of the display device. The array substrate includes a drain electrode of a thin film transistor unit, an insulating layer and a pixel electrode. The insulating layer is located between the drain electrode and the pixel electrode, and has a via hole formed therein, and the drain electrode and the pixel electrode are connected through the via hole. A surface of the pixel electrode at the via hole is a rough face.

First claim

The invention claimed is:

1. An array substrate, comprising:
a base substrate;
a drain electrode of a thin film transistor unit, an insulating layer and a pixel electrode on the base substrate, wherein,
the insulating layer is located between the drain electrode and the pixel electrode,
the insulating layer has a via hole formed therein, and the drain electrode and the pixel electrode are connected through the via hole,
a surface of the pixel electrode at the via hole is a rough face,
wherein an orthographic projection of the drain electrode of the thin film transistor on the base substrate falls completely within a scope of orthographic projection of the rough face of the pixel electrode.

2. The array substrate according to claim 1 , wherein,
the surface of the pixel electrode at the via hole is subjected to a plasma treatment.

3. The array substrate according to claim 2 , wherein,
the plasma includes hydrogen plasma or silane plasma.

4. The array substrate according to claim 1 , wherein,
the pixel electrode is made of a transparent conductive thin film of an indium oxide based metal oxide.

5. The array substrate according to claim 4 , wherein,
the rough face of the pixel electrode includes metal indium in big particles.

6. A display device, comprising the array substrate according to claim 1 .

7. A manufacturing method of an array substrate, comprising:
forming a drain electrode of a thin film transistor unit, an insulating layer and a pixel electrode on a base substrate, wherein, the insulating layer is located between the drain electrode and the pixel electrode, and has a via hole formed therein, and the drain electrode and the pixel electrode are connected through the via hole;
treating a surface of the pixel electrode at the via hole to be a rough face,
wherein an orthographic projection of the drain electrode of the thin film transistor on the base substrate falls completely within a scope of orthographic projection of the rough face of the pixel electrode.

8. The manufacturing method of the array substrate according to claim 7 , wherein, treating the surface of the pixel electrode at the via hole to be the rough face includes:
treating the pixel electrode at the via hole with plasma, so that the surface of the pixel electrode at the via hole is the rough face.

9. The manufacturing method of the array substrate according to claim 8 , wherein,
the plasma includes hydrogen plasma or silane plasma.

10. The manufacturing method of the array substrate according to claim 7 , wherein,
the pixel electrode is made of a transparent conductive thin film of an indium oxide based metal oxide.

11. The manufacturing method of the array substrate according to claim 10 , wherein,
the rough face of the pixel electrode includes metal indium in big particles.

12. The array substrate according to claim 2 , wherein,
the pixel electrode is made of a transparent conductive thin film of an indium oxide based metal oxide.

13. The array substrate according to claim 3 , wherein,
the pixel electrode is made of a transparent conductive thin film of an indium oxide based metal oxide.

14. The display device according to claim 6 , wherein,
the surface of the pixel electrode at the via hole is subjected to a plasma treatment.

15. The display device according to claim 14 , wherein,
the plasma includes hydrogen plasma or silane plasma.

16. The display device according to claim 6 , wherein,
the pixel electrode is made of a transparent conductive thin film of an indium oxide based metal oxide.

17. The display device according to claim 16 , wherein,
the rough face of the pixel electrode includes metal indium in big particles.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Zhang Feng
• Cao Zhanfeng
• Yao Qi
• Shu Shi

Classifications

• H01L2924/00

  Electricity · mapped topic

• G02F2001/136222

  Physics · mapped topic

• H01L2924/0002

  Electricity · mapped topic

• G02F1/136227

  Through-hole connection of the pixel electrode to the active element through an insulation layer · CPC title

• H01L27/1262

  Electricity · mapped topic