Plating method, plating apparatus and storage medium

Patent metadata

Field	Value
Publication number	US-9725810-B2
Application number	US-201214129743-A
Country	US
Kind code	B2
Filing date	Jun 20, 2012
Priority date	Jun 29, 2011
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A liquid displacement is performed by supplying a plating liquid onto a substrate 2 while rotating the substrate 2 at a first rotational speed in a state that a pre-treatment liquid remains on a surface of the substrate 2 (liquid displacement process (block S 305 )). Then, an initial film is formed on the substrate 2 by stopping the rotation of the substrate 2 or by rotating the substrate 2 at a second rotational speed while continuously supplying the plating liquid onto the substrate 2 (incubation process (block S 306 )). Thereafter, a plating film is grown by rotating the substrate 2 at a third rotational speed while continuously supplying the plating liquid onto the substrate 2 (plating film growing process (block S 307 )). Here, the first rotational speed is higher than the third rotational speed, and the third rotational speed is higher than the second rotational speed.

First claim

We claim:

1. A plating method comprising:
a first material plating process of forming a first material layer on a substrate by supplying a first plating liquid onto the substrate;
a second material plating process of forming a second material layer on the first material layer, the second material layer being made of a different material from the first material layer;
wherein the second material plating process comprises:
an incubation process of forming a film on an entire region of the first material layer by supplying a second plating liquid onto the substrate while stopping the rotation of the substrate or rotating the substrate at a first rotational speed to reduce a movement of the second plating liquid;
after the completion of the incubation process, a growing process of growing the film in the growing process such that the grown film thickness increases by 10 times or more by continuously supplying the second plating liquid onto the substrate while increasing the first rotational speed of the substrate to a second rotational speed that is greater than the first rotational speed to replace the second plating liquid in which a concentration of a reactive species is reduced in the growing process with a new second plating liquid.

2. The plating method of claim 1 ,
wherein the first rotational speed is in a range from about 0 rpm to about 30 rpm.

3. The plating method of claim 1 ,
wherein the second rotational speed is in a range from about 30 rpm to about 100 rpm.

4. The plating method of claim 1 ,
wherein the second plating liquid includes a CoP plating liquid, a CoWB plating liquid, a CoWP plating liquid, a CoB plating liquid or a NiP plating liquid.

5. The plating method of claim 1 ,
wherein the second material plating process further comprises:
prior to the incubation process, a liquid displacement process of performing a liquid displacement by supplying the second plating liquid onto the substrate while rotating the substrate at a displacement rotational speed that is higher than the second rotational speed at the growing process in a state that a pre-treatment liquid remains on a surface of the substrate.

6. The plating method of claim 5 ,
wherein the displacement rotational speed is in a range from about 100 rpm to about 300 rpm.

7. The plating method of claim 5 ,
wherein a time for performing the incubation process is longer than a time for performing the liquid displacement process, and a time for performing the growing process is longer than the time for performing the incubation process.

8. The plating method of claim 5 ,
wherein the first plating liquid and the second plating liquid are supplied onto the substrate by a discharge nozzle, and
in the liquid displacement process, the discharge nozzle is moved from a central portion of the substrate toward a peripheral portion of the substrate.

9. A computer-readable storage medium having stored thereon computer-executable instructions that, in response to execution, cause a plating apparatus to perform a plating method,
wherein the plating method comprises:
a first material plating process of forming a first material layer on a substrate by supplying a first plating liquid onto the substrate;
a second material plating process of forming a second material layer on the first material layer, the second material layer being made of a different material from the first material layer;
wherein the second material plating process comprises:
an incubation process of forming a film on an entire region of the first material layer by supplying a second plating liquid onto the substrate while stopping the rotation of the substrate or rotating the substrate at a first rotational speed to reduce a movement of the second plating liquid;
after the completion of the incubation process, a growing process of growing the film in the growing process such that the grown film thickness increases by 10 times or more by continuously supplying the second plating liquid onto the substrate while increasing the first rotational speed of the substrate to a second rotational speed that is greater than the first rotational speed to replace the second plating liquid in which a concentration of a reactive species is reduced in the growing process with a new second plating liquid.

Assignees

• Mizutani Nobutaka
• Tanaka Takashi
• Iwashita Mitsuaki
• Tokyo Electron Ltd

Inventors

• Mizutani Nobutaka
• Tanaka Takashi
• Iwashita Mitsuaki

Classifications

• C23C18/1675

  Process conditions · CPC title

• C23C18/1619 Primary

  Apparatus for electroless plating · CPC title

• C23C18/1676

  Heating of the solution · CPC title

• C23C18/1689 Primary

  After-treatment · CPC title

• C23C18/1669

  Agitation, e.g. air introduction · CPC title