Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns
US-9244351-B2 · Jan 26, 2016 · US
Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition
US9725389B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9725389-B2 |
| Application number | US-201214364829-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 29, 2012 |
| Priority date | Dec 30, 2011 |
| Publication date | Aug 8, 2017 |
| Grant date | Aug 8, 2017 |
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- Title
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Abstract
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Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.
First claim
Opening claim text (preview).
What is claimed is: 1. A monomer for a hardmask composition represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, A and A′ are the same or different and are each independently a substituted or unsubstituted aromatic group selected from the following Group 1, L is a single bond or a substituted or unsubstituted C1 to C6 alkylene group, and n is an integer ranging from 2 to 5, such that A has from 2 to 5 of the group bonded thereto 2. The monomer for a hardmask composition of claim 1 , wherein at least one of A and A′ comprises a substituted or unsubstituted polycyclic aromatic group. 3. The monomer for a hardmask composition of claim 1 , wherein the monomer is represented by the following Chemical Formula 1b or 1c: wherein, in Chemical Formula 1b and 1c, A 1 to A 4 are each independently a substituted or unsubstituted benzene group, a substituted or unsubstituted naphthalene group, a substituted or unsubstituted pyrene group, or a combination thereof, and L 1 to L 3 are each independently a single bond or a substituted or unsubstituted C1 to C6 alkylene group. 4. The monomer for a hardmask composition of claim 3 , wherein the monomer is represented by the following Chemical Formula 1dd or 1ee: 5. The monomer for a hardmask composition of claim 1 , wherein the monomer has a molecular weight of about 200 to 3,000. 6. The monomer for a hardmask composition of claim 1 , wherein A is a substituted or unsubstituted aromatic group selected from the following Group 1, provided that, when A is substituted, the substituent of A does not include a hydroxyl group, 7. The monomer for a hardmask composition of claim 1 , wherein A is an unsubstituted aromatic group selected from the following Group 1, 8. A hardmask composition, comprising the monomer of claim 1 , and a solvent. 9. The hardmask composition of claim 8 , wherein the monomer is included in an amount of about 0.1 to 30 wt % based on the total amount of the hardmask composition. 10. A method of forming a pattern, comprising: providing a material layer on a substrate, applying the hardmask composition according to claim 8 on the material layer, heat-treating the hardmask composition to provide a hardmask layer, forming a silicon-containing thin layer on the hardmask layer, forming a photoresist layer on the silicon-containing thin layer, forming a photoresist pattern by exposing and developing the photoresist layer, selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer, and etching an exposed part of the material layer. 11. The method of claim 10 , wherein the hardmask composition is applied using a spin-on coating method. 12. The method of claim 10 , wherein, in the heat-treating of the hardmask composition to provide the hardmask layer, the hardmask composition is heat-treated at about 100 to 500° C.
Assignees
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Classifications
characterised by their composition, e.g. multilayer masks · CPC title
using masks for insulating materials · CPC title
Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title
carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title
containing aromatic or arylaliphatic hydroxyl groups · CPC title
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- What does patent US9725389B2 cover?
- Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.
- Who is the assignee on this patent?
- Cheil Ind Inc, Cheil Ind Inc
- What technology area does this patent fall under?
- Primary CPC classification C07C39/21. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Aug 08 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).