Flowable oxide deposition using rapid delivery of process gases

Patent metadata

Field	Value
Publication number	US-9064684-B1
Application number	US-201213607511-A
Country	US
Kind code	B1
Filing date	Sep 7, 2012
Priority date	Sep 24, 2009
Publication date	Jun 23, 2015
Grant date	Jun 23, 2015

Abstract

Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing chamber. An excess amount of the second process gas may be provided in the processing chamber during the introduction of the second process gas. Flowable silicon-containing films forms on a surface of the substrate to at least partially fill the gaps.

First claim

What is claimed is:

1. A semiconductor processing apparatus for forming a flowable silicon-containing film on a substrate, the apparatus comprising:
a processing chamber having a substrate support disposed therein;
one or more gas inlets to the processing chamber;
an accumulator connected to at least one of the one or more gas inlets; and
a controller comprising program instructions for:
maintaining the substrate support at a temperature between about −20° C. and 100° C.;
introducing a first process gas into the processing chamber and maintaining the processing chamber at a processing chamber pressure level;
accumulating a second process gas comprising a silicon-containing compound in the accumulator until the accumulator is at an accumulator pressure level,
wherein the accumulator pressure level is substantially greater than the processing chamber pressure level; and

rapidly introducing the second process gas from the accumulator into the processing chamber such that an amount of the second process gas is provided in the processing chamber during the introduction of the second process gas.

2. The semiconductor processing apparatus of claim 1 , wherein the program instructions for rapidly introducing the second process gas include instructions for introducing the second process gas into the processing chamber after the first process gas is introduced into the processing chamber.

3. The semiconductor processing apparatus of claim 1 , wherein program instructions for accumulating the second process gas comprise program instructions for setting the accumulator pressure level at least 100% greater than the processing chamber pressure level.

4. The semiconductor processing apparatus of claim 1 , wherein the program instructions for accumulating the second process gas comprise instructions for accumulating the second process gas until an accumulator pressure delta reaches a minimum level, the accumulator pressure delta being the difference between the pressure in the accumulator and the pressure in the processing chamber.

5. The semiconductor processing apparatus of claim 4 , wherein the accumulator pressure delta is at least about 25 Torr.

6. The semiconductor processing apparatus of claim 1 , further comprising a second accumulator, and wherein the controller further comprises program instructions for accumulating a third process gas in the second accumulator.

7. The semiconductor processing apparatus of claim 1 , wherein the program instructions for introducing the first process gas comprise program instructions for introducing the first process gas at a constant flow rate.

8. The semiconductor processing apparatus of claim 1 , wherein the volume of the accumulator is 0.01 or less times the volume of the processing chamber.

9. The semiconductor processing apparatus of claim 1 , wherein the program instructions for introducing the first process gas comprises program instructions for introducing an oxidant.

10. The semiconductor processing apparatus of claim 1 , wherein the program instructions for introducing the first process gas comprises program instructions for introducing an alcohol.

11. The semiconductor processing apparatus of claim 1 , wherein the program instructions for introducing the first process gas comprises program instructions for introducing a gas selected from ozone, hydrogen peroxide, oxygen, water, methanol, ethanol, and isopropanol.

12. A semiconductor processing apparatus for forming a flowable silicon-containing film on a substrate, the apparatus comprising:
a processing chamber having a substrate support disposed therein;
one or more gas inlets to the processing chamber;
an accumulator connected to at least one of the one or more gas inlets; and
a controller comprising program instructions for:
maintaining the substrate support at a temperature between about −20° C. and 100° C.;
introducing a first process gas comprising a silicon-containing compound into the processing chamber and maintaining the processing chamber at a processing chamber pressure level;
accumulating a second process gas in the accumulator until the accumulator is at an accumulator pressure level,
wherein the accumulator pressure level is substantially greater than the processing chamber pressure level; and

rapidly introducing the second process gas from the accumulator into the processing chamber such that an amount of the second process gas is provided in the processing chamber during the introduction of the second process gas.

13. The semiconductor processing apparatus of claim 12 , wherein the program instructions for rapidly introducing the second process gas include instructions for introducing the second process gas into the processing chamber after the first process gas is introduced into the processing chamber.

14. The semiconductor processing apparatus of claim 12 , wherein program instructions for accumulating the second process gas comprise program instructions for setting the accumulator pressure level to a level at least 100% greater than the processing chamber pressure level.

15. The semiconductor processing apparatus of claim 12 , wherein the program instructions for accumulating the second process gas comprise instructions for accumulating the second process gas until an accumulator pressure delta reaches a minimum level, the accumulator pressure delta being the difference between the pressure in the accumulator and the pressure in the processing chamber.

16. The semiconductor processing apparatus of claim 15 , wherein the accumulator pressure delta is at least about 25 Torr.

17. The semiconductor processing apparatus of claim 12 , further comprising a second accumulator, and wherein the controller further comprises program instructions for accumulating a third process gas in the second accumulator.

18. The semiconductor processing apparatus of claim 12 , wherein the program instructions for introducing the first process gas comprise program instructions for introducing the first process gas at a constant flow rate.

19. The semiconductor processing apparatus of claim 12 , wherein the volume of the accumulator is 0.01 or less times the volume of the processing chamber.

Assignees

• Mui Collin K L
• Nittala Lakshminarayana
• Draeger Nerissa
• Novellus Systems Inc

Inventors

• Mui Collin K L
• Nittala Lakshminarayana
• Draeger Nerissa

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6536

  by exposure to radiation, e.g. visible light · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title