Methods of forming a microelectronic device structure, and related microelectronic device structures and microelectronic devices

Patent metadata

Field	Value
Publication number	US-9717148-B2
Application number	US-201514859026-A
Country	US
Kind code	B2
Filing date	Sep 18, 2015
Priority date	Sep 18, 2015
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

First claim

What is claimed is:

1. A microelectronic device structure, comprising:
a structure protruding from a surface of another structure, and comprising:
a proximal region adjacent an interface between the structure and the surface of the another structure; and
a distal region opposing the proximal region;

a wire coiled around at least one sidewall of the structure; and
a fused region integral and continuous with the distal region of the structure and a terminal end of the wire.

2. The microelectronic device structure of claim 1 , wherein the wire comprises a single, solid, substantially homogeneous metal structure.

3. The microelectronic device structure of claim 2 , wherein the wire further comprises an insulative sheath physically contacting and surrounding a periphery of the single, solid, substantially homogeneous metal structure.

4. The microelectronic device structure of claim 1 , wherein the structure comprises a nickel-cobalt ferrous alloy, the wire comprises substantially pure nickel, and the fused region comprises nickel, cobalt, and iron.

5. The microelectronic device structure of claim 1 , wherein the fused region is substantially homogeneous.

6. The microelectronic device structure of claim 1 , wherein the fused region exhibits a non-planar surface and extends outwardly beyond lateral boundaries of at least one sidewall of the structure.

7. A microelectronic device, comprising:
a microelectronic device structure comprising:
at least one structure longitudinally projecting from a surface of another structure; and
at least one wire coupled to the at least one structure, a portion of the at least one wire coiled up and around the at least one structure and attached to the at least one structure through at least one fused region integral and continuous with the at least one structure and the at least one wire.

8. The microelectronic device of claim 7 , wherein the at least one wire comprises only one solid, substantially homogeneous, annealed metal structure.

Assignees

• Capital Formation Inc
• Quartzdyne Inc

Inventors

• Hahn Mark

Classifications

• H10W80/211

  using auxiliary members, e.g. aids for protecting the bonding area · CPC title

• H10W80/011

  Manufacture or treatment of pads or other interconnections to be direct bonded · CPC title

• H10W72/5525

  comprising copper [Cu] · CPC title

• H10W72/5434

  the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires · CPC title

• H10W72/981

  Auxiliary members, e.g. spacers · CPC title