Electrochemical plating methods

Patent metadata

Field	Value
Publication number	US-9704717-B2
Application number	US-201514825921-A
Country	US
Kind code	B2
Filing date	Aug 13, 2015
Priority date	Mar 19, 2014
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

An electrochemical process for applying a conductive film onto a substrate having a seed layer includes placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel, with the plating bath having pH of 4.0 to 9.0. Electric current is conducted through the bath to the substrate. The cobalt or nickel ions in the bath deposit onto the seed layer. The plating bath may contain cobalt chloride and glycine. The electric current may range from 1-50 milli-ampere per square cm. After completion of the electrochemical process, the substrate may be removed from the plating bath, rinsed and dried, and then annealed at a temperature of 200 to 400 C to improve the material properties and reduce seam line defects. The plating and anneal process may be performed through multiple cycles.

First claim

The invention claimed is:

1. An electrochemical process for applying a conductive film onto a substrate having a seed layer, comprising:
placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel salts, with the plating bath having pH of 6 to 9;
conducting electric current through the bath to reduce cobalt or nickel ions in the plating bath and deposit a super conformal film of cobalt or nickel onto the seed layer.

2. The method of claim 1 wherein the seed layer comprises copper, cobalt, gold, silver, nickel, palladium and/or ruthenium on the substrate.

3. The method of claim 1 with the plating bath comprising cobalt chloride or other cobalt salts.

4. The method of claim 1 with the plating bath comprising glycine or another chelating agent.

5. The method of claim 1 with the electric current ranging from 1-50 milli-ampere per square cm.

6. The method of claim 1 further including annealing the substrate at a temperature of 200 to 450 C.

7. The method of claim 6 with the annealing causing the film to reflow.

8. The method of claim 6 wherein the annealing is performed in an environment of H2/He, N2/H2, a reducing gas, pure hydrogen, or ammonia.

9. The method of claim 1 with the plating bath further including a chelating agent which complexes cobalt metal ions.

10. The method of claim 1 wherein the cobalt or nickel is deposited into sub-micron interconnects on the substrate.

11. The method of claim 1 wherein the plating bath includes a chelating agent selected from the group of citrate, glycine, tartrate and ethylene diamine.

12. The method of claim 1 with the seed layer on a barrier layer on the substrate.

13. The method of claim 1 with the substrate having no barrier layer.

14. An electrochemical process for depositing a conductive film into sub-micron interconnects on a substrate, with a seed layer on the substrate, comprising:
placing the substrate into contact with an electrochemical plating bath comprising a metal selected from cobalt or nickel, and with the plating bath having pH of 6.0 to 9.0;
conducting electric current at a rate of 1-50 milli-ampere per square cm through the bath and to the substrate to deposit a super conformal film of metal onto features of the substrate; and
removing the substrate from the plating bath, rinsing and drying the substrate.

15. The method of claim 14 with the plating bath comprising cobalt chloride.

16. The method of claim 14 with the plating bath comprising glycine.

17. The method of claim 14 further including repeating the steps at least once to provide a multi-step multi-cycle electrochemical deposition and anneal process.

18. The method of claim 17 further including annealing the substrate at a temperature of 200 to 450 C to cause the film of metal to reflow and further fill features of the substrate.

19. An electrochemical process for applying a conductive film onto a substrate having a seed layer, a first feature of a first size and a second feature of a second size greater than the first size, comprising:
placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel salts, with the plating bath having pH of 6.0 to 9;
performing a plating step by conducting electric current through the bath to reduce cobalt or nickel ions in the plating bath and deposit a super conformal first film of cobalt or nickel onto the seed layer, with the first film entirely filling the first feature but not the second feature;
performing a second plating step by conducting electric current through the bath to reduce cobalt or nickel ions in the plating bath and deposit a super conformal second film of cobalt or nickel onto first film, with the second film entirely filling the second feature.

20. The method of claim 19 with the plating bath further including a chelating agent which complexes cobalt metal ions, and further including annealing the substrate at a temperature of 200 to 450 C.

Assignees

• Applied Materials Inc

Inventors

• Lam John W
• Emesh Ismail
• Shaviv Roey

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10P95/906

  for altering the shape of semiconductors, e.g. smoothing the surface · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/059

  by reflowing or applying pressure · CPC title