High purity copper—manganese alloy sputtering target
US-9165750-B2 · Oct 20, 2015 · US
Sputtering target and manufacturing method therefor
US9704695B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9704695-B2 |
| Application number | US-201214348174-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 12, 2012 |
| Priority date | Sep 30, 2011 |
| Publication date | Jul 11, 2017 |
| Grant date | Jul 11, 2017 |
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- Title
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Abstract
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A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×10 7 N/m 2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.
First claim
Opening claim text (preview).
The invention claimed is: 1. A backing plate integrated sputtering target comprising a Cu—Mn alloy backing plate integrated sputtering target having a composition consisting of 0.05 to 20 wt. % of Mn and the remainder being Cu, wherein the backing plate integrated sputtering target is composed of a target part having a face to be sputtered and a flange part surrounding and holding the target part, the flange part having a mechanical strength higher than that of the target part and having a Vickers hardness (Hv) of 90 or more and 0.2% yield stress of 6.98×10 7 N/m 2 or more, and the face of the target part having a (111) orientation ratio within a range of 47.1% to 48.9%. 2. A method of producing a backing plate integrated sputtering target composed of a target part having a face to be sputtered and a flange part surrounding and holding the target part, comprising the steps of: performing plastic working of a Cu—Mn alloy target material having a composition consisting of 0.05 to 20 wt. % of Mn and remainder being Cu; then further performing plastic working of only the flange part so that the flange part has a mechanical strength higher than that of the target part, a Vickers hardness (Hv) of 90 or more, and 0.2% yield stress of 6.98×10 7 N/m 2 or more; and after said plastic working steps, heat-treating and rapid cooling the target material; wherein the face to be sputtered has a (111) orientation ratio within a range of 47.1% to 48.9%. 3. A backing plate integrated sputtering target according to claim 1 , wherein the Vickers hardness (Hv) of the flange part is within a range of 91 to 98. 4. A backing plate integrated sputtering target according to claim 1 , wherein the 0.2% yield stress of the flange part is within a range of 6.98×10 7 to 7.31×10 7 N/m 2 .
Assignees
Inventors
Classifications
Material · CPC title
Cathode assembly for sputtering apparatus, e.g. Target · CPC title
Targets · CPC title
Making other particular articles (making wire fabrics B21F; making chains or chain parts B21L) · CPC title
with manganese as the next major constituent · CPC title
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- What does patent US9704695B2 cover?
- A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×10 7 N/m 2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can f…
- Who is the assignee on this patent?
- Nagata Kenichi, Otsuki Tomio, Okabe Takeo, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H01J37/3435. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).