Method for producing a semiconductor device, and semiconductor device
US-2015380238-A1 · Dec 31, 2015 · US
Gallium nitride devices with gallium nitride alloy intermediate layer
US8928035B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928035-B2 |
| Application number | US-201314084429-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 19, 2013 |
| Priority date | Dec 14, 2000 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
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The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure comprising: a substrate; an intermediate layer comprising a gallium nitride alloy formed above said substrate, said gallium nitride alloy including aluminum and having an aluminum concentration greater than a gallium concentration of said gallium nitride alloy; a transition layer including at least one compositionally-graded layer and a superlattice; a gallium nitride layer formed over said transition layer.…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8928035B2 cover?
- The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material…
- Who is the assignee on this patent?
- Int Rectifier Corp
- What technology area does this patent fall under?
- Primary CPC classification C30B23/02. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).