Module with integrated power electronic circuitry and logic circuitry

Patent metadata

Field	Value
Publication number	US-9681558-B2
Application number	US-201414457663-A
Country	US
Kind code	B2
Filing date	Aug 12, 2014
Priority date	Aug 12, 2014
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

A integrated power module with integrated power electronic circuitry and logic circuitry includes an embedded power semiconductor module including one or more power semiconductor dies embedded in a dielectric material, a multi-layer logic printed circuit board with one or more logic dies mounted to a surface of the logic printed circuit board, and a flexible connection integrally formed between the embedded power semiconductor module and the logic printed circuit board. The flexible connection mechanically connects the embedded power semiconductor module to the logic printed circuit board and provides an electrical pathway between the embedded power semiconductor module and the logic printed circuit board. A method of manufacturing the integrated power module is also provided.

First claim

What is claimed is:

1. An integrated power module with integrated power electronic circuitry and logic circuitry, comprising:
a first lamination substrate comprising a dielectric material laminated with a metal foil;
an embedded power semiconductor module on the first lamination substrate and including one or more power semiconductor dies embedded in a dielectric material;
a multi-layer logic printed circuit board (PCB) core on the first lamination substrate and spaced apart from the embedded power semiconductor module;
a second lamination substrate comprising a dielectric material laminated with a metal foil, the second lamination substrate covering the embedded power semiconductor module and the multi-layer logic PCB core;
a recess formed in a dielectric-filled gap between the power semiconductor module and the multi-layer logic PCB core, the recess extending through the second lamination substrate and the dielectric-filled gap to or into the first lamination substrate; and
a flexible connection integrally formed between the embedded power semiconductor module and the multi-layer logic PCB core, the flexible connection mechanically connecting the embedded power semiconductor module to the multi-layer logic PCB core and providing an electrical pathway between the embedded power semiconductor module and the multi-layer logic PCB core, the flexible connection formed from a region of the first lamination substrate exposed by the recess.

2. The integrated power module of claim 1 , wherein the flexible connection is bent such that the multi-layer logic PCB core lies in a different plane than the embedded power semiconductor module.

3. The integrated power module of claim 2 , wherein the flexible connection is bent such that the multi-layer logic PCB core lies in a plane that is perpendicular to the plane in which the embedded power semiconductor module lies.

4. The integrated power module of claim 1 , wherein the flexible connection is bent such that the multi-layer logic PCB core is positioned over or under the embedded power semiconductor module.

5. The integrated power module of claim 1 , wherein the electrical pathway provided by the integral flexible connection is formed by the metal foil of the first lamination substrate.

6. The integrated power module of claim 1 , further comprising one or more logic dies mounted to a surface of the metal foil of the second lamination substrate over the multi-layer logic PCB core.

7. The integrated power module of claim 6 , wherein the flexible connection is bent such that the one or more logic dies face toward the embedded power semiconductor module.

8. A power module, comprising:
a first metal foil;
a first dielectric material laminated on the first metal foil;
an embedded power semiconductor module on the first dielectric material and including one or more power semiconductor dies;
a multi-layer logic printed circuit board (PCB) core on the first dielectric material and spaced apart from the embedded power semiconductor module;
a second dielectric material covering the embedded power semiconductor module and the multi-layer logic PCB core;
a second metal foil over the second dielectric material, the second dielectric material being laminated on the second metal foil; and
a recess formed in a dielectric-filled gap between the power semiconductor module and the multi-layer logic PCB core, the recess extending through the second metal foil, the second dielectric material and the dielectric-filled gap to or into the first dielectric material so as to expose a region of the first dielectric material,
wherein the region of the first dielectric material exposed by the recess and a region of the first metal foil covered by the exposed region of the first dielectric material form a flexible electrical connection between the embedded power semiconductor module and the multi-layer logic PCB core.

9. The power module of claim 8 , wherein the flexible electrical connection is bent such that the multi-layer logic PCB core lies in a different plane than the embedded power semiconductor module.

10. The power module of claim 9 , wherein the flexible electrical connection is bent such that the multi-layer logic PCB core lies in a plane that is perpendicular to the plane in which the embedded power semiconductor module lies.

11. The power module of claim 8 , wherein the flexible electrical connection is bent such that the multi-layer logic PCB core is positioned over or under the embedded power semiconductor module.

12. The power module of claim 8 , further comprising one or more logic dies mounted to a surface of the second metal foil over the multi-layer logic PCB core.

13. The power module of claim 12 , wherein the flexible electrical connection is bent such that the one or more logic dies face toward the embedded power semiconductor module.

Assignees

• Infineon Technologies Ag

Inventors

• Chen Liu
• Dinkel Markus
• Salminen Toni

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/9413

  on encapsulations · CPC title

• H10W72/874

  On different surfaces · CPC title

• H10W72/241

  Dispositions, e.g. layouts · CPC title