Method and system for EUV mask cleaning with non-thermal solution

Patent metadata

Field	Value
Publication number	US-9665000-B1
Application number	US-201514942633-A
Country	US
Kind code	B1
Filing date	Nov 16, 2015
Priority date	Nov 16, 2015
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

The present disclosure provides a method of repairing a mask. The method includes inspecting a mask to identify a defect on the mask; performing a cleaning process to the mask using a non-thermal chemical solution to the mask; and repairing the mask to remove the defect from the mask. The non-thermal chemical solution is cooled by a cooling module to a working temperature below room temperature.

First claim

What is claimed is:

1. A method of repairing an exposure mask, the method comprising:
inspecting the mask to identify a defect on the mask;
performing a cleaning process to the mask using a non-thermal chemical solution to the mask, wherein the non-thermal chemical solution is cooled by a cooling module to a working temperature below room temperature; and
repairing the mask to remove the defect from the mask.

2. The method of claim 1 , wherein the performing of the cleaning process to the mask includes:
mixing sulfuric acid and hydrogen peroxide to form a sulfuric peroxide mixture;
cooling the sulfuric peroxide mixture to form a non-thermal sulfuric peroxide mixture using the cooling module; and
applying the non-thermal sulfuric peroxide mixture to the mask.

3. The method of claim 2 , wherein the cooling of the sulfuric peroxide mixture to form the non-thermal sulfuric peroxide mixture includes cooling the sulfuric peroxide mixture to form the non-thermal sulfuric peroxide mixture with a working temperature ranging between 4° C. and 15° C.

4. The method of claim 2 , wherein the cooling of the sulfuric peroxide mixture to form the non-thermal sulfuric peroxide mixture includes cooling the sulfuric peroxide mixture by a cooling water having a temperature below room temperature.

5. The method of claim 4 , wherein the cooling module includes an inner tube and an outer spiral tube surrounding the inner tube, wherein the inner tube and outer spiral tube are made of quartz and designed to be thermally coupled for sufficient heat transportation between the inner tube and the outer spiral tube.

6. The method of claim 5 , wherein the cooling of the sulfuric peroxide mixture to form the non-thermal sulfuric peroxide mixture includes:
flowing the sulfuric peroxide mixture to the inner tube; and
simultaneously flowing the cooling water to the outer spiral tube such that the non-thermal sulfuric peroxide mixture is cooled to a working temperature below the room temperature.

7. The method of claim 6 , wherein the cooling of the sulfuric peroxide mixture to form the non-thermal sulfuric peroxide mixture further includes adjusting a flow rate of the cooling water such that the non-thermal sulfuric peroxide mixture is cooled to the working temperature before the applying the non-thermal sulfuric peroxide mixture to the mask.

8. The method of claim 2 , wherein the repairing of the mask includes applying an electron-beam and xenon difluoride (XeF 2 ) to remove a portion of an absorption layer of the mask; and
wherein the applying of the non-thermal sulfuric peroxide mixture to the mask includes spraying the non-thermal sulfuric peroxide mixture to the mask through a nozzle.

9. The method of claim 1 , wherein the mask is an extreme ultraviolet (EUV) mask that includes a low thermal expansion material (LTEM) substrate, reflective multiple layers (ML) deposited on the LTEM substrate, a capping layer of ruthenium (Ru) on the ML, and an absorption layer on the capping layer.

10. The method of claim 9 , wherein the EUV mask includes a mask selected from the group consisting of a binary mask and a phase shift mask.

11. A method of repairing an exposure, the method comprising:
identifying a first defect on the mask;
mixing sulfuric acid and hydrogen peroxide to form a sulfuric peroxide mixture having a first temperature;
cooling the sulfuric peroxide mixture to form a non-thermal sulfuric peroxide mixture having a second temperature; and
applying the non-thermal sulfuric peroxide mixture to the mask to thereby remove the first defect from the mask.

12. The method of claim 11 , wherein the first temperature is at least 25° C. and the second temperature is less than 25° C.

13. The method of claim 11 , wherein the first temperature is about 120° C. and the second temperature is less than 25° C.

14. The method of claim 11 , wherein cooling the sulfuric peroxide mixture to form the non-thermal sulfuric peroxide mixture having the second temperature includes cooling the sulfuric peroxide mixture by passing the sulfuric peroxide mixture through a cooling water module.

15. The method of claim 14 , wherein the cooling water module includes:
an inner tube configured to pass the sulfuric peroxide mixture therethrough; and
an outer tube surrounding the inner tube and configured to pass cooling water therethrough.

16. The method of claim 11 , further comprising:
identifying a second defect on the mask; and
applying an electron beam to the mask to repair the second defect on the mask.

17. A method of repairing an exposure, the method comprising:
inspecting the mask to identify a defect on the mask;
performing a cleaning process to the mask, the cleaning process including:
mixing sulfuric acid and hydrogen peroxide to form a sulfuric peroxide mixture having a first temperature; and
cooling the sulfuric peroxide mixture to form a non-thermal sulfuric peroxide mixture having a second temperature; and

applying the non-thermal sulfuric peroxide mixture having the second temperature to the mask to repair the defect on the mask.

18. The method of claim 17 , wherein the first temperature is at least 25° C. and the second temperature is less than 25° C.

19. The method of claim 17 , wherein mixing sulfuric acid and hydrogen peroxide to form the sulfuric peroxide mixture having the first temperature includes mixing sulfuric acid and hydrogen peroxide with a sulfuric acid/hydrogen peroxide volume ratio ranging from 4:1 to 2:1.

20. The method of claim 17 , further comprising:
after applying the non-thermal sulfuric peroxide mixture having the second temperature to the mask to repair the defect on the mask, loading the mask into a lithography system; and
performing a lithography exposing process on a wafer in the lithography system using the mask.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Shen Ching-Wei
• Lu Chi-Lun
• Lin Kuan-Wen

Classifications

• G03F1/72

  Repair or correction of mask defects · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• B08B7/0035

  by radiant energy, e.g. UV, laser, light beam or the like · CPC title

• B08B3/10

  with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title