Method for doping impurities, method for manufacturing semiconductor device, and semiconductor device

Patent metadata

Field	Value
Publication number	US-2016247681-A1
Application number	US-201615052427-A
Country	US
Kind code	A1
Filing date	Feb 24, 2016
Priority date	Feb 25, 2015
Publication date	Aug 25, 2016
Grant date	—

Abstract

Impurity elements are doped at a high concentration exceeding a thermodynamic equilibrium concentration into a solid material having an extremely small diffusion coefficient of the impurity element. A method for doping impurities includes steps for depositing source film made of material containing impurity elements with a film thickness on a surface of a solid target object (semiconductor substrate) made from the solid material. The film thickness is determined in consideration of irradiation time per light pulse and the energy density of the light pulse. The method also includes a step for irradiating the source film by the light pulse with the irradiation time and the energy density so as to dope the impurity elements into the target object at a concentration exceeding a thermodynamic equilibrium concentration.

First claim

1 . A method for doping impurities, comprising:
depositing a source film made of material containing impurity elements on a surface of a solid target object, a thickness of the source film is determined by an irradiation time light pulse and an energy density of the light pulse; and irradiating the source film by the light pulse with the irradiation time and the energy density so as to dope the impurity elements into the target object at a concentration exceeding a thermodynamic equilibrium concentration.

2 . The method of claim 1 , wherein a film thickness of the source film is further determined by a distribution state and a depth of recessed irregularities generated on a surface of the target object, the recessed irregularities are ascribable to irradiation by the light pulse.

3 . The method of claim 2 , wherein the energy density is 3.3 J/cm 2 or higher, but not exceeding 6.0 J/cm 2 .

4 . The method of claim 3 , wherein a wavelength of the light pulse is 190 nanometers or longer.

5 . The method of claim 4 , wherein an irradiation processing with the light pulse is executed in a state where the target object is at room temperature or higher, but not exceeding 500° C.

6 . The method of claim 5 , wherein the impurity element is aluminum.

7 . The method of claim 6 , wherein the film thickness is decided within a range of 240 nanometers or larger,
but not exceeding (4.4×10 3 ·1n(F)−5350) nanometers
where the energy density is F (J/cm 2 ).

8 . The method of claim 1 , wherein the source film is a nitride film, and,
the impurity element to be doped is nitrogen contained in the nitride film.

9 . The method of claim 8 , wherein the irradiation by the light pulse includes:
deciding shot number of the light pulse in consideration of a film thickness of the nitride film, an energy density of the light pulse, and irradiation time per a single shot of the light pulse; and irradiating the nitride film with the light pulse with the energy density, the irradiation time, and the shot number.

10 . The method of claim 9 , wherein the nitride film is a silicon nitride film.

11 . The method of claim 10 , wherein a film thickness of the nitride film is ten nanometers or larger, but not exceeding one micrometer.

12 . The method of claim 11 , wherein the energy density is 1.0 J/cm 2 or higher, but not exceeding 6.0 J/cm 2 .

13 . The method of claim 12 , wherein a wavelength of the light pulse is 190 nanometers or longer, but not exceeding 380 nanometers.

14 . The method of claim 13 , wherein the light pulse is irradiated with the shot number of one or more, but not exceeding ten per a single irradiation area.

15 . The method of claim 14 , wherein a planar pattern is directly written, by scanning a beam of the light pulse so as to move the target object in an X-Y plane, relative to an irradiation position of the beam.

16 . The method of claim 15 , wherein the irradiation by the light pulse is executed in a state where temperature of the target object is set to room temperature or higher, but not exceeding 600° C.

17 . A method for manufacturing a semiconductor device, comprising:
preparing an intermediate product having a first semiconductor region; depositing source film made of material containing impurity elements on a surface of the first semiconductor region, a thickness of the source film is determined by an irradiation time per light pulse and an energy density of the light pulse; and forming a second semiconductor region by irradiating the source film by the light pulse with the irradiation time and the energy density and doping the impurity elements into the first semiconductor region at a concentration exceeding a thermodynamic equilibrium concentration.

18 . The method of claim 17 , wherein the first semiconductor region is a first conductivity type,
the source film contains impurity elements of a second conductivity type, the second conductivity type of the second semiconductor region is established by the impurity elements in the source film; and an element structure is produced through the intermediate product, the element structure includes a pn junction implemented by the first semiconductor region and the second semiconductor region.

19 . The method of claim 17 , wherein the source film contains impurity elements having the same conductivity type as that of the first semiconductor region, in the second semiconductor region serving as a contact region, the impurity elements in the source film is doped to a higher concentration than that of the first semiconductor region, and the method further comprises:
forming an electrode film serving as an ohmic contact with the contact region, wherein an element structure including an ohmic contact structure is produced through the intermediate product.

20 . The method of claim 17 , wherein the first semiconductor region is the first conductivity type, and the method further comprises:
delineating doping mask on the first semiconductor region, the doping mask having a window for doping impurities, wherein the source film containing the second conductivity type impurity element is deposited on a surface of the first semiconductor region partially through the doping mask, the source film having the thickness; and by irradiating the source film by the light pulse, a pattern of the second semiconductor region having the second conductivity type is selectively formed in the first semiconductor region immediately below the window.

21 . The method of claim 20 , wherein the doping mask is made of a silicon oxide film.

22 . The method of claim 17 , wherein the first semiconductor region is n-type, the source film is a nitride film, by irradiating the nitride film with the light pulse, nitrogen contained in the nitride film is doped into the first semiconductor region, establishing the second semiconductor region having the n-type, and the method further comprises:
depositing an ohmic contact electrode film so as to contact with the second semiconductor region.

23 . The method of claim 22 , wherein the forming the second semiconductor region includes:
deciding shot number of the light pulse in consideration of a film thickness of the nitride film, an energy density of the light pulse, and irradiation time per a single shot of the light pulse; and irradiating the nitride film with the light pulse with the energy density, the irradiation time, and the shot number.

24 . The method of claim 18 , wherein a planar pattern of the second semiconductor region in directly written by scanning a beam of the light pulse so as to move the position of the first conductivity region in an X-Y plane, relative to an irradiation position of the beam.

25 . A semiconductor device comprising:
a first semiconductor region; and a second semiconductor region in the first semiconductor region, having impurity concentration exceeding a thermodynamic equilibrium concentration.

26 . The semiconductor device of claim 25 , wherein the first semiconductor region is n-type, the second semiconductor region is p-type, the impurity element is aluminum, and the semiconductor device further comprising:
an ohmic contact electrode film contacting with the second semiconductor region.

27 . The semiconductor device of claim 25 , wherein the first semiconductor region is n-type, the second semiconductor region is n-typ

Assignees

• Univ Kyushu Nat Univ Corp
• Fuji Electric Co Ltd

Inventors

• Ikeda Akihiro
• Ikenoue Hiroshi
• Asano Tanemasa
• Iguchi Kenichi
• Nakazawa Haruo
• Yoshikawa Koh
• Seki Yasukazu

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P34/422

  using incoherent radiation · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P32/1408

  from or through or into an external applied layer, e.g. photoresist or nitride layers · CPC title

• H10P32/171

  being group IV material · CPC title