Heating plate with heating zones for substrate processing and method of use thereof

Patent metadata

Field	Value
Publication number	US-9646861-B2
Application number	US-201314056604-A
Country	US
Kind code	B2
Filing date	Oct 17, 2013
Priority date	Oct 21, 2009
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

A heating plate for use in a substrate support is configured to provide temperature profile control of a substrate supported on the substrate support in a vacuum chamber of a substrate processing apparatus. The heating plate includes an independently controllable heater zones operable to tune a temperature profile on an upper surface of the heating plate. The heater zones are each powered by two or more power lines wherein each power line is electrically connected to a different group of the heater zones and each respective heater zone is electrically connected to a different pair of power lines.

First claim

We claim:

1. A substrate support configured to provide temperature profile control of a substrate supported on the substrate support in a vacuum chamber of a substrate processing apparatus, the substrate support comprising:
an electrostatic clamping (ESC) layer;
a heating plate comprising at least four independently controllable heater zones operable to tune a temperature profile on an upper surface of the ESC layer, the heater zones powered by two or more power lines wherein each power line is electrically connected to a different group of the heater zones, wherein each respective heater zone is electrically connected to a different pair of the power lines.

2. The substrate support of claim 1 , wherein:
the heating plate includes a first electrically insulating layer with the heater zones distributed laterally across the first electrically insulating layer and comprising at least first, second, third and fourth heater zones, each heater zone having one or more heater elements;
the power lines including at least a first electrically conductive power supply line electrically connected to the first and second heater zones and a second electrically conductive power supply line electrically connected to the third and fourth heater zones; and
the power lines including at least a first electrically conductive power return line electrically connected to the first and third heater zones and a second electrically conductive power return line electrically connected to the second and fourth heater zones.

3. The substrate support of claim 1 , wherein the heater zones comprise at least 100 independently controllable heater zones embedded in ceramic material.

4. The substrate support of claim 1 , wherein a rectifier is serially connected between adjacent heater zones.

5. The substrate support of claim 1 , wherein the total number of the power lines is less than the total number of the heater zones.

6. The substrate support of claim 1 , wherein each heater zone includes one or more resistive heaters.

7. A substrate support which provides temperature profile control of a substrate supported on the substrate support in a vacuum chamber of a substrate processing apparatus, the substrate support comprising:
an electrostatic clamping (ESC) layer;
a heater plate comprising at least four independently controllable heater zones operable to tune a temperature profile on an upper surface of the ESC layer, the heater zones powered by two or more power lines wherein each power line is electrically connected to a different group of the heater zones wherein no two heater zones are electrically connected to the same pair of power lines and each respective heater zone can be activated by directing electrical current through a pair of the power lines.

8. The substrate support of claim 7 , comprising temperature sensors configured to measure temperatures at locations on a substrate support surface of the substrate support; and a control and power circuit electrically connected to the heater zones and configured to receive the measured parameters from the temperature sensors and adjust power delivered to the heater zones to minimize differences between the measured parameters and set targets.

9. The substrate support of claim 7 , further comprising:
a switching device which supplies power to each of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing.

10. The substrate support of claim 9 , further comprising an isolator electrically connected to electric ground, wherein the switching device is electrically connected to the isolator.

11. The substrate support of claim 9 , wherein the switching device is located in a vacuum chamber.

12. The substrate support of claim 10 , wherein the isolator is an isolation transformer that isolates the switching device from RF.

13. The substrate support of claim 7 , further comprising:
a primary heater layer comprising one or more primary heaters;
the heater zones are supported on a first electrically insulating layer and the one or more primary heaters are electrically insulated from the heater zones and the power lines.

14. The substrate support of claim 9 , wherein the switching device is a high side controller that floats at an RF potential, the substrate support further comprising:
an optical coupler connected to the high side controller for digital communication with a low-side controller.

15. The substrate support of claim 9 , wherein the power lines include power supply and power return lines and the switching device electrically connects at least one power return line to a floating reference.

16. The substrate support of claim 9 , wherein the switching device is configured to turn on one of the heater zones when at least one power supply line electrically connected to the heater zone is electrically connected to a power supply, and at least one power return line electrically connected to the heater zone is electrically connected to the floating reference.

17. The substrate support of claim 9 , wherein the power lines include power supply and power return lines and the switching device electrically connects all power return lines to a floating reference.

18. The substrate support of claim 9 , wherein the switching device is configured to address each heater zone at a frequency of at least 1 Hz.

19. The substrate support of claim 7 , further comprising sensors configured to measure parameters on different locations on the substrate support and power supplied to the heater zones.

20. The substrate support of claim 19 , wherein the sensors include at least one of voltage and current sensors.

21. The substrate support of claim 19 , wherein the measured parameters include at least temperature measurements.

22. The substrate support of claim 9 , wherein the power lines include power supply and power return lines and the switching device is configured to maintain an electrical connection between all power return lines and a floating reference during a time when one power supply line is powered and regulate power transmitted to heat a heater zone that is turned on.

23. The substrate support of claim 7 , further comprising a temperature controlled and radio frequency (RF) powered base plate beneath the heating plate with high side circuitry housed in local faraday cage under the base plate.

24. The substrate support of claim 7 , further comprising a local faraday cage, the local faraday cage configured to house high side circuitry.

25. The substrate support of claim 23 , further comprising a primary heater layer above the radio frequency (RF) powered base plate.

Assignees

• Lam Res Corp

Inventors

• Singh Harmeet
• Gaff Keith
• Benjamin Neil
• Comendant Keith

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title