Microwave irradiation apparatus
US-9224623-B2 · Dec 29, 2015 · US
US9638376B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9638376-B2 |
| Application number | US-201213593709-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 24, 2012 |
| Priority date | Aug 26, 2011 |
| Publication date | May 2, 2017 |
| Grant date | May 2, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A susceptor includes a first body including a plurality of first holes and a second body including a plurality of second holes. According to one arrangement, the second body is spaced from the first body to form a gap which allows a gas to pass from the second holes to the first holes. According to this or another arrangement, the first body is removably or rotatably coupled to the second body, or both. Rotation of the second body by a first amount or in a first direction brings at least one first hole in alignment with at least one second hole. And, rotation of the second body by a second amount or in a second direction causes a misalignment to occur between these holes.
Opening claim text (preview).
What is claimed is: 1. A susceptor configured to support a silicon wafer to manufacture an epitaxial wafer in a chamber of a fabrication apparatus in which a gas is provided into the chamber, comprising: a first body of a susceptor including a top surface, a bottom surface and a plurality of first holes passing through the top surface and the bottom surface of the first body; and a second body of the susceptor including a top surface, a bottom surface and a plurality of second holes passing through the top surface and the bottom surface of the second body, the second body being configured to support a silicon wafer, to manufacture an epitaxial wafer, wherein the second body is positioned on and partially contacts the first body, at least one gap being provided between the bottom surface of the second body and the top surface of the first body to allow a passage of a gas between the first and second bodies, wherein the bottom surface of the second body and the top surface of the first body have different cross-sectional shapes across the susceptor including a center of the susceptor, wherein the cross-sectional shapes have contour lines selected from a group consisting of linear contour lines, contour lines curved in a convex direction and contour lines curved in a concave direction, wherein the first holes and the second holes are included in a predetermined region, the predetermined region extending from a portion of the susceptor spaced inward from an external edge of the silicon wafer by a prescribed amount to the center or a central region of the susceptor, and wherein a first number of first holes is in substantial alignment with a first number of second holes, and wherein a second number of first holes is misaligned with a second number of second holes. 2. The susceptor of claim 1 , wherein the top surface of the second body is configured to support the silicon wafer. 3. The susceptor of claim 1 , wherein the first and second holes are oriented in substantially a vertical direction. 4. The susceptor of claim 1 , wherein the first and second holes are oriented at different angles. 5. The susceptor of claim 1 , wherein one of the first holes or the second holes are oriented in substantially a vertical direction and the other of the first holes or the second holes are oriented at one or more inclined angles. 6. The susceptor of claim 1 , wherein: a first number of first holes and a first number of second holes are oriented at substantially a first angle, and a second number of first holes and a second number of second holes are oriented at one or more second angles different from the first angle. 7. The susceptor of claim 6 , wherein the first angle is vertical. 8. The susceptor of claim 1 , wherein the first body is removably coupled relative to the second body. 9. The susceptor of claim 8 , wherein the first body is removably coupled relative to the second body by a removable fastener. 10. The susceptor of claim 9 , wherein the fastener is located along a peripheral edge of the second body in overlapping relationship with the first body. 11. The susceptor of claim 9 , wherein the fastener is located in at least one of the second holes of the second body. 12. The susceptor of claim 1 , wherein the second body is rotatably coupled relative to the first body. 13. The susceptor of claim 12 , wherein: rotation of one of the first body or the second body relative to the other of the first body or the second body by a first amount or first direction causes one or more of the first holes to be in substantial alignment with one or more second holes, and rotation of one of the first body or the second body relative to the other of the first body or the second body by a second amount or second direction causes at least one first hole to be misaligned with all of the second holes. 14. The susceptor of claim 1 , wherein the first and second holes have different sizes.
Elements in the interior of the support, e.g. electrodes, heating or cooling devices · CPC title
the substrate being supported substantially horizontally · CPC title
Processes · CPC title
for laboratory use · CPC title
Arrangements for supervising or controlling working operations · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.