Apparatus for processing substrate for supplying reaction gas having phase difference

Patent metadata

Field	Value
Publication number	US-9620395-B2
Application number	US-201214357628-A
Country	US
Kind code	B2
Filing date	Nov 16, 2012
Priority date	Nov 17, 2011
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, a substrate holder on which the one ore more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, and a gas supply unit disposed inside the external reaction tube to supply a reaction gas into the process space, the gas supply unit forming a flow of the reaction gas having different phase differences in a vertical direction.

First claim

What is claimed is:

1. A substrate processing apparatus in which processes with respect to substrates are performed, the substrate processing apparatus comprising:
a lower chamber having an opened upper side, the lower chamber comprising a passage allowing the substrates to pass therethrough in a side thereof;
an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed;
a substrate holder on which the substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked and a process position in which the processes with respect to the substrates are performed; and
a gas supply unit disposed inside the external reaction tube to supply a reaction gas into the process space,
wherein the gas supply unit comprises:
a plurality of supply nozzles disposed along an inner wall of the external reaction tube, the plurality of supply nozzles having a plurality of supply holes for discharging the reaction gas; and
a plurality of exhaust nozzles disposed along the inner wall of the external reaction tube, the plurality of exhaust nozzles having a plurality of exhaust holes for suctioning an non-reaction gas and byproducts within the process space,
wherein the plurality of supply holes are disposed in an inner wall of the external reaction tube to have a phase difference in a circumference direction of the external reaction tube from each other and to be located at a different height from each other,
wherein the plurality of exhaust holes are disposed in the inner wall of the external reaction tube to have a phase difference in a circumference direction of the external reaction tube from each other and to be located at a different height from each other,
wherein each of the supply holes is disposed at a same height as a corresponding one of the exhaust holes, and a center of each of the supply holes is symmetric to a center of the corresponding one of the exhaust holes with respect to a center of the external reaction tube, and
wherein the gas supply unit forms a flow of the reaction gas to have a phase difference in a vertical direction.

2. The substrate processing apparatus of claim 1 , wherein the gas supply unit comprises:
a plurality of supply tubes respectively connected to the plurality of supply nozzles to supply the reaction gas into each of the supply nozzles; and
a plurality of exhaust tubes respectively connected to the plurality of exhaust nozzles to allow the non-reaction gas and the byproducts suctioned through each of the exhaust nozzles to pass therethrough.

3. The substrate processing apparatus of claim 1 , wherein the supply nozzles and the exhaust nozzles are disposed to respectively correspond to the substrates stacked on the substrate holder when the substrate holder is disposed at the process position.

4. The substrate processing apparatus of claim 1 , wherein each of the supply nozzles is a circular tube having the supply hole through which the reaction gas is discharged, the supply hole having a circular sectional area,
each of the exhaust nozzles has an inner space with a section area gradually decreasing in a suction direction thereof and an exhaust hole defined in a front end thereof and having a slot-shaped sectional area.

5. The substrate processing apparatus of claim 1 , wherein each of the supply nozzles has an inner space with a sectional area gradually increasing in a discharge direction thereof, the supply hole being defined in a front end thereof and having a slot-shaped sectional area,
each of the exhaust nozzles has an inner space with a sectional area gradually decreasing a suction direction thereof and an exhaust hole defined in a front end thereof and having a slot-shaped sectional area.

6. The substrate processing apparatus of claim 1 , wherein each of the supply nozzles has an inner space with a sectional area gradually increasing in a discharge direction thereof, the supply hole being defined in a front end thereof and having a slot-shaped sectional area, and an injection plate disposed on the supply hole and having a plurality of injection holes,
each of the exhaust nozzles has an inner space with a sectional area gradually decreasing a suction direction thereof and an exhaust hole defined in a front end thereof and having a slot-shaped sectional area.

7. The substrate processing apparatus of claim 1 , wherein the gas supply unit further comprises a plurality of supply lines respectively connected to the supply nozzles to supply the reaction gas into each of the supply nozzles.

8. The substrate processing apparatus of claim 7 , further comprising a support flange disposed between the lower chamber and the external reaction tube,
wherein the supply lines are connected to the supply nozzles through the support flange, respectively.

9. The substrate processing apparatus of claim 1 , further comprising an internal reaction tube disposed inside the external reaction tube, the internal reaction tube being disposed around the substrate holder to divide a reaction region with respect to the substrates, and the supply holes and the exhaust holes are disposed in the internal reaction tube.

10. The substrate processing apparatus of claim 1 , further comprising thermocouples vertically disposed inside the external reaction tube.

11. The substrate processing apparatus of claim 1 , further comprising a rotation shaft connected to the substrate holder, the rotation shaft being rotated in a preset direction during the processes.

Assignees

• Eugene Technology Co Ltd

Inventors

• Yang Il-Kwang
• Je Sung-Tae
• Song Byoung-Gyu
• Kim Yong-Ki
• Kim Kyong-Hun
• Shin Yang-Sik

Classifications

• H10P14/3602

  In-situ cleaning · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P72/3312

  Vertical transfer of a batch of workpieces · CPC title

• H10P72/0434 Primary

  mainly by convection · CPC title