Chemical vapor deposition apparatus

Patent metadata

Field	Value
Publication number	US-9410247-B2
Application number	US-201213655696-A
Country	US
Kind code	B2
Filing date	Oct 19, 2012
Priority date	Oct 20, 2011
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

First claim

What is claimed is:

1. A chemical vapor deposition apparatus comprising:
a reaction chamber having a reaction space therein;
a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers such that the plurality of wafers are spaced apart from each other in a vertical direction in the reaction space; and
a gas supplying part disposed in the reaction chamber to supply one or more reaction gases to the plurality of wafers, the gas supplying part comprising:
a plurality of gas pipes disposed in the reaction chamber to supply the one or more reaction gases from outside to the reaction space;
a plurality of supplying pipes disposed around the wafer boat, wherein the plurality of supplying pipes are arranged spaced apart from each other in the vertical direction such that each of the supplying pipes is disposed around a corresponding one of the wafers and is connected to one or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the one or more reaction gases supplied by the one or more corresponding gas pipes to the corresponding one of the wafers;

wherein the reaction chamber includes a plurality of spraying holes formed in an upper surface thereof to supply ambient gas from outside into the reaction space; and
wherein the reaction chamber further includes a gate part formed on the upper surface of the reaction chamber to open or close the plurality of spraying holes to adjust a flux of the ambient gas supplied through the plurality of spraying holes.

2. The chemical vapor deposition apparatus of claim 1 , wherein at least one of the plurality of supplying pipes has a plurality of separated portions to prevent mixing of the two or more of the reaction gases.

3. The chemical vapor deposition apparatus of claim 2 , wherein the number of the separated portions corresponds to the number of gas pipes.

4. The chemical vapor deposition apparatus of claim 2 , wherein one portion of at least one of the plurality of supplying pipes is spaced apart from the other portions thereof in a substantially horizontal direction.

5. The chemical vapor deposition apparatus of claim 1 , wherein at least one of the plurality of supplying pipes has a ring shaped structure arranged substantially parallel to the corresponding wafer at substantially the same vertical position as the corresponding wafer.

6. The chemical vapor deposition apparatus of claim 5 , wherein a vertical spacing between the plurality of supplying pipes corresponds to a vertical spacing between wafer holders arranged in the wafer boat.

7. The chemical vapor deposition apparatus of claim 1 , wherein at least one of the plurality of supplying pipes has a plurality of supplying nozzles formed along an inner surface of the pipe facing the wafer boat to supply the corresponding reaction gas to the corresponding wafer.

8. The chemical vapor deposition apparatus of claim 7 , wherein the plurality of supplying nozzles are downwardly inclined toward the corresponding wafer.

9. A chemical vapor deposition apparatus comprising:
a reaction chamber having a reaction space therein;
a plurality of wafer holders disposed in the reaction space and spaced apart from each other in a vertical direction, each of the wafer holders arranged and structured to hold a wafer;
a first gas pipe disposed in the reaction chamber to supply a first reaction gas from outside to the reaction space;
a second gas pipe disposed in the reaction chamber to supply a second reaction gas from outside to the reaction space; and
a plurality of supplying pipes, each supplying pipe being substantially contiguous and connected to both of the first and second gas pipes, wherein an interior space of one or more of the supplying pipes is divided to prevent mixing of the first and second gases, and
wherein the plurality of supplying pipes are arranged spaced apart from each other in the vertical direction in the reaction space such that each of the supplying pipes is disposed around a corresponding one of the plurality of wafer holders;
wherein the reaction chamber includes a plurality of spraying holes formed in an upper surface thereof to supply ambient gas from outside into the reaction space; and
wherein the reaction chamber further includes a gate part formed on the upper surface of the reaction chamber to open or close the plurality of spraying holes to adjust a flux of the ambient gas supplied through the plurality of spraying holes.

10. The chemical vapor deposition apparatus of claim 9 , wherein the number of divided spaces of the supplying pipe corresponds to the number of gas pipes.

11. The chemical vapor deposition apparatus of claim 10 , wherein each divided space of the supplying pipe is spaced apart from the other divided spaces thereof.

12. The chemical vapor deposition apparatus of claim 9 , wherein the first and second gas pipes extend in a substantially vertical direction and the supplying pipes are arranged in a substantially horizontal direction.

13. The chemical vapor deposition apparatus of claim 9 , wherein the wafer holder has a receptacle formed in a central portion to receive the wafer.

14. The chemical vapor deposition apparatus of claim 13 , wherein the receptacle is depressed from an upper surface of the wafer holder to a depth corresponding to a thickness of the wafer.

15. A chemical vapor deposition apparatus comprising:
a reaction chamber having a reaction space therein;
a plurality of wafer holders arranged in the reaction space along a line that extends in a substantially vertical direction;
a plurality of gas pipes disposed in the reaction space, each of the gas pipes extending substantially in the vertical direction; and
a plurality of supplying pipes arranged at different vertical positions along an extending direction of the plurality of gas pipes, wherein each of the supplying pipes extends in a substantially horizontal direction and is connected to one or more corresponding gas pipes, wherein each supplying pipe has a plurality of separated portions, and
wherein each of the supplying pipes is disposed around a corresponding one of the plurality of wafer holders;
wherein the reaction chamber includes a plurality of spraying holes formed in an upper surface thereof to supply ambient gas from outside into the reaction space; and
wherein the reaction chamber further includes a gate part formed on the upper surface of the reaction chamber to open or close the plurality of spraying holes to adjust a flux of the ambient gas supplied through the plurality of spraying holes.

16. The chemical vapor deposition apparatus of claim 15 , wherein the number of separated portions corresponds to the number of gas pipes.

17. The chemical vapor deposition apparatus of claim 15 , wherein the separated portions of the supply pipe are spaced apart from each other.

18. The chemical vapor deposition apparatus of claim 15 , wherein each of the plurality of supplying pipes has a plurality of supplying nozzles formed along an inner surface of the pipe facing the wafer boat to supply the corresponding reaction gas to the corresponding wafer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Jong Hyun
• Ryu Hyun Seok
• Lee Jung Hyun
• Kim Ki Sung
• Yoon Suk Ho
• Kim Young Sun

Classifications

• H10P14/3441

  Conductivity type · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• C23C16/45565 Primary

  Shower nozzles · CPC title

• H01L21/0254

  Electricity · mapped topic