ZnO film production system and production method using ZnO film production system having heating units and control device

Patent metadata

Field	Value
Publication number	US-9611545-B2
Application number	US-201314417196-A
Country	US
Kind code	B2
Filing date	Jun 19, 2013
Priority date	Jul 27, 2012
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part R 1 and supplying oxygen gas from a third gas supply source (oxygen gas supply source) G 3 into a reaction container, controlling heating units (heaters H 1 , H 2 and H 3 ) with a control device CONT such that temperature T 1 of the first raw material storing part R 1 , temperature T 2 of a second raw material storing part R 2 and temperature T 3 of the installation base on which the substrate is disposed satisfy a relationship of T 1 <T 2 <T 3 . Thus, according to the production method of the present disclosure, it is possible to produce a high-quality ZnO film.

First claim

What is claimed is:

1. A ZnO film production system, comprising:
an installation base configured to support a substrate on which a ZnO film is to be formed;
a reaction container configured to accommodate the installation base;
a first raw material storing part configured to communicate with an interior of the reaction container and to store a solid first raw material which contains Zn;
a second raw material storing part configured to communicate with the interior of the reaction container and to store a solid raw second material which contains Zn;
heating units configured to heat the installation base, the first and the second raw material storing parts;
a chlorine gas supply source configured to supply a chlorine gas to at least the first raw material storing part;
an oxygen gas supply source configured to supply an oxygen gas into the reaction container; and a control device,
wherein the control device is configured to control the heating units such that a temperature T 1 of the first raw material storing part, a temperature T 2 of the second raw material storing part and a temperature T 3 of the installation base on which the substrate is disposed satisfy a relationship of T 1 <T 2 <T 3 during formation of the ZnO film,

the control device is configured to supply a flow rate of the chlorine gas supplied from the chlorine gas supply source to the first raw material storing part,
the control device is configured to supply a flow rate of the oxygen gas supplied from the oxygen gas supply source into the reaction container, and
the first and the second raw material storing parts are arranged adjacent to one another such that the first and the second raw material storing parts are configured to allow the chlorine gas first to pass through the first raw material storing part and next pass through the second raw material storing part before reaching the substrate, and the first and the second raw material storing parts have a bottom surface inclined such that a depth of the first and the second raw material storing parts grows larger toward a side of the second raw material storing part having a gas injection port, the depth of the first and the second raw material storing parts is measured from a horizontal surface positioned above the bottom surface of the first and the second raw material storing parts.

2. The system of claim 1 , wherein the control device controls an amount of the chlorine gas supplied from the chlorine gas supply source and sets a partial pressure of a zinc chloride gas to become 8.8×10 −5 atm or more and 3.6×10 −4 atm or less in a near-field region above a surface of the substrate.

3. The system of claim 1 , wherein the control device controls an amount of the chlorine gas supplied from the chlorine gas supply source and sets a partial pressure of a zinc chloride gas to become 8.8×10 −5 atm or more and 3.3×10 −4 atm or less in a near-field region above a surface of the substrate.

4. The system of claim 1 , wherein the control device controls an amount of the chlorine gas supplied from the chlorine gas supply source and sets a partial pressure of a zinc chloride gas to become 8.8×10 −5 atm or more and 2.2×10 4 atm or less in a near-field region above a surface of the substrate.

5. A ZnO film production method for producing a ZnO film using a ZnO film production system, where said ZnO film production system includes:
an installation base configured to support a substrate on which the ZnO film is to be formed;
a reaction container configured to accommodate the installation base;
a first raw material storing part configured to communicate with an interior of the reaction container and to store a solid first raw material which contains Zn;
a second raw material storing part configured to communicate with the interior of the reaction container and to store a solid second raw material which contains Zn;
heating units configured to heat the installation base, the first and the second raw material storing parts;
a chlorine gas supply source configured to supply a chlorine gas to at least the first raw material storing part;
an oxygen gas supply source configured to supply an oxygen gas into the reaction container; and
a control device,
wherein the control device is configured to control the heating units such that a temperature T 1 of the first raw material storing part, a temperature T 2 of the second raw material storing part and a temperature T 3 of the installation base on which the substrate is disposed satisfy a relationship of T 1 <T 2 <T 3 during formation of the ZnO film,
the control device is configured to control a flow rate of the chlorine gas supplied from the chlorine gas supply source to the first raw material storing part,
the control device is configured to supply a flow rate of the oxygen gas supplied from the oxygen gas supply source into the reaction container, and
the first and the second raw material storing parts are arranged adjacent to one another such that the first and the second raw material storing parts are configured to allow the chlorine gas to first pass through the first raw material storing part and then pass through the second raw material storing part, and the first and the second raw material storing parts have a bottom surface inclined such that a depth of the first and the second raw material storing parts grows larger toward a side of the second raw material storing part having a gas injection port, the depth of the first and the second raw material storing parts is measured from a horizontal surface positioned above the bottom surface of the first and the second raw material storing parts,
the method comprising:
disposing the substrate on the installation base; and

while supplying the chlorine gas from the chlorine gas supply source to the first raw material storing part and supplying the oxygen gas from the oxygen gas supply source into the reaction container, controlling the heating units with the control device such that the temperature T 1 of the first raw material storing part, the temperature T 2 of the second raw material storing part and the temperature T 3 of the installation base on which the substrate is disposed satisfy a relationship of T 1 <T 2 <T 3 .

Assignees

• Tokyo Electron Ltd
• Nat Univ Corp Tokyo Univ Agriculture & Tech

Inventors

• Kang Song Yun
• Kumagai Yoshinao
• Koukitu Akinori

Classifications

• H10P14/3426

  Oxides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/4488

  by in situ generation of reactive gas by chemical or electrochemical reaction · CPC title

• B05C19/06

  Storage, supply or control of the application of particulate material; Recovery of excess particulate material · CPC title