Method for manufacturing aluminum-based group iii nitride single crystal

Patent metadata

Field	Value
Publication number	US-2016108554-A1
Application number	US-201414892875-A
Country	US
Kind code	A1
Filing date	Jun 10, 2014
Priority date	Jun 10, 2013
Publication date	Apr 21, 2016
Grant date	—

Abstract

The method for manufacturing an aluminum-based group III nitride single crystal includes the step of supplying an aluminum halide gas and a nitrogen source gas onto a base substrate, such that a reaction of the aluminum halide gas and the nitrogen source gas is conducted on the base substrate, wherein the reaction of the aluminum halide gas and the nitrogen source gas is conducted under coexistence of a halogen-based gas such that a halogen-based gas ratio (H) represented by the following formula (1) is no less than 0.1 and less than 1.0:
H=V H /I ( V H +V Al )  (1)

(In the formula (1), V H represents a supply of the halogen-based gas; and V Al represents a supply of the aluminum halide gas); and a growth rate of the aluminum-based group III nitride single crystal is no less than 10 μm/h.

First claim

1 . A method for manufacturing an aluminum-based group III nitride single crystal comprising the step of:
supplying an aluminum halide gas and a nitrogen source gas onto a base substrate, such that a reaction of the aluminum halide gas and the nitrogen source gas is conducted on the base substrate, wherein the reaction of the aluminum halide gas and the nitrogen source gas is conducted under coexistence of a halogen-based gas such that a halogen-based gas ratio (H) represented by the following formula (1) is no less than 0.1 and less than 1.0:
H=V H /( V H +V Al )  (1)

(In the formula (1), V H represents a supply of the halogen-based gas; V Al represents a supply of the aluminum halide gas; and V H and V Al are simultaneous supplies per unit time in terms of volumes in a standard state.); and
a growth rate of the aluminum-based group III nitride single crystal is no less than 10 μm/h.

2 . The method for manufacturing an aluminum-based group III nitride single crystal according to claim 1 ,
wherein the reaction of the aluminum halide gas and the nitrogen source gas under coexistence of the halogen-based gas comprises the steps of: reacting aluminum and the halogen-based gas such that unreacted said halogen-based gas remains, such that a mixed gas comprising the aluminum halide gas and the unreacted halogen-based gas is produced; and bringing the mixed gas and the nitrogen source gas into contact with each other.

3 . The method for manufacturing an aluminum-based group III nitride single crystal according to claim 1 ,
wherein the reaction of the aluminum halide gas and the nitrogen source gas under coexistence of the halogen-based gas comprises the step of: supplying the halogen-based gas onto the base substrate by a supplying means separate from a supplying means of the aluminum halide gas, such that the halogen-based gas coexists.

4 . The method for manufacturing an aluminum-based group III nitride single crystal according to claim 1 ,
wherein a hydrogen chloride gas is used as the halogen-based gas.

Assignees

• Tokuyama Corp

Inventors

• Koukitsu Akinori
• Kumagai Yoshinao
• Nagashima Toru
• Okayama Reiko

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• C30B29/403

  AIII-nitrides · CPC title

• C30B25/165 Primary

  the flow of the reactive gases · CPC title