Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly

Patent metadata

Field	Value
Publication number	US-9601350-B2
Application number	US-201213982697-A
Country	US
Kind code	B2
Filing date	Jan 30, 2012
Priority date	Jan 31, 2011
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

First claim

The invention claimed is:

1. A bonding substrate fabrication method for fabricating a substrate (“bonding substrate”) on which a bonding surface is formed, the bonding substrate fabrication method comprising:
a first surface treatment step of surface-treating a surface of a substrate by irradiation with radiated particles including energetic particles; and
a second surface treatment step of surface-treating the substrate surface by irradiation with radiated particles including metal particles;
wherein the bonding substrate is fabricated as a result of implementing the first surface treatment step and second surface treatment step; and
implementation of the first surface treatment step and the second surface treatment step is controlled so that the metal particles will be distributed in a base material of a surface layer of the bonding substrate, and the implementation is controlled without forming a metal layer on the surface of the bonding substrate.

2. The bonding substrate fabrication method according to claim 1 , wherein the first surface treatment step and the second surface treatment step are simultaneously implemented.

3. The bonding substrate fabrication method according to claim 1 , wherein the second surface treatment step is implemented after implementation of the first surface treatment step.

4. The bonding substrate fabrication method according to claim 1 , wherein:
in the first surface treatment step, an energetic particle source is used to radiate particles including energetic particles from the energetic particle source to the substrate surface; and
in the second surface treatment step, a metal particle source is used to radiate particles including metal particles from the metal particle source to the substrate surface.

5. The bonding substrate fabrication method according to claim 4 , wherein the metal particle source comprises a metal body.

6. The bonding substrate fabrication method according to claim 5 , wherein the metal body is movable.

7. The bonding substrate fabrication method according to claim 1 , wherein the base material of the substrate surface layer is silicon.

8. The bonding substrate fabrication method according to claim 1 , wherein the first surface treatment step starts at a pressure of 10 −5 Pa or less.

9. A substrate bonding method comprising:
a step of preparing a pair of bonding substrates, at least one of the bonding substrates being fabricated by a bonding substrate fabrication method comprising:
a first surface treatment step of surface-treating a surface of a substrate by irradiation with radiated particles including energetic particles; and
a second surface treatment step of surface-treating the substrate surface by irradiation with radiated particles including metal particles;
wherein the bonding substrate is fabricated as a result of implementing the first surface treatment step and second surface treatment step; and
implementation of the first surface treatment step and the second surface treatment step is controlled so that the metal particles will be distributed in a base material of a surface layer of the bonding substrate, and the implementation is controlled without forming a metal layer on the surface of the bonding substrate;

a bonding step of bonding the bonding substrates together.

10. The substrate bonding method according to claim 9 , wherein the bonding step is implemented in air or a vacuum of at least 10 −5 Pa.

11. The substrate bonding method according to any one of claim 9 , wherein the bonding step is implemented at a temperature of −60° C. to +200° C., preferably at room temperature.

12. A substrate bonding method comprising:
a step of preparing a pair of bonding substrates fabricated by a bonding substrate fabrication method comprising:
a first surface treatment step of surface-treating a surface of a substrate by irradiation with radiated particles including energetic particles; and
a second surface treatment step of surface-treating the substrate surface by irradiation with radiated particles including metal particles;
wherein the bonding substrate is fabricated as a result of implementing the first surface treatment step and second surface treatment step; and
implementation of the first surface treatment step and the second surface treatment step is controlled so that the metal particles will be distributed in a base material of a surface layer of the bonding substrate, and the implementation is controlled without forming a metal layer on the surface of the bonding substrate; and

a bonding step of bonding the bonding substrates together.

Assignees

• Suga Tadatomo
• Yamauchi Akira
• Kondou Ryuichi
• Matsumoto Yoshiie
• Bondtech Co Ltd
• Taiyo Yuden Kk
• Lan Technical Service Co Ltd

Inventors

• Suga Tadatomo
• Yamauchi Akira
• Kondou Ryuichi
• Matsumoto Yoshiie

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1914

  using bonding · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P70/12

  by dry cleaning only (H10P70/52 takes precedence) · CPC title