Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensor
US-2016315117-A1 · Oct 27, 2016 · US
Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state image sensing device
US9224601B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9224601-B2 |
| Application number | US-201314078217-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 12, 2013 |
| Priority date | Nov 13, 2012 |
| Publication date | Dec 29, 2015 |
| Grant date | Dec 29, 2015 |
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Abstract
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Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.
First claim
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The invention claimed is: 1. A method of producing an epitaxial silicon wafer, comprising: a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer, wherein, after the first step, the silicon wafer is transferred into an e…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9224601B2 cover?
- Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modi…
- Who is the assignee on this patent?
- Sumco Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P30/224. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 29 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).