Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor

Patent metadata

Field	Value
Publication number	US-9595470-B2
Application number	US-201514703732-A
Country	US
Kind code	B2
Filing date	May 4, 2015
Priority date	May 9, 2014
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

Methods for forming tungsten film using fluorine-free tungsten precursors such as tungsten chlorides are provided. Methods involve depositing a tungsten nucleation layer by exposing a substrate to a reducing agent such as diborane (B 2 H 6 ) and exposing the substrate to a tungsten chloride, followed by depositing bulk tungsten by exposing the substrate to a tungsten chloride and a reducing agent. Methods also involve diluting the reducing agent and exposing the substrate to a fluorine-free precursor in pulses to deposit a tungsten nucleation layer. Deposited films exhibit good step coverage and plugfill.

First claim

What is claimed is:

1. A method of depositing tungsten on a substrate, the method comprising:
exposing the substrate to a reducing agent and hydrogen,
exposing the substrate to a tungsten chloride to deposit the tungsten, and
repeating the exposing the substrate to the reducing agent and the hydrogen and the exposing the substrate to the tungsten chloride in cycles to deposit the tungsten,
wherein the ratio of hydrogen flow rate to reducing agent flow rate during the exposing the substrate to the reducing agent and the hydrogen is between about 10:1 and about 100:1.

2. The method of claim 1 , wherein the tungsten chloride is selected from the group consisting of WCl 2 , WCl 4 , WCl 5 , WCl 6 , and mixtures thereof.

3. The method of claim 1 , wherein the reducing agent is selected from the group consisting of boranes, silanes, and germanes.

4. The method of claim 1 , wherein the tungsten is deposited at a temperature between about 450° C. and about 650° C.

5. The method of claim 1 , wherein the flow rate of the reducing agent is between about 100 sccm and about 500 sccm.

6. The method of claim 1 , wherein the substrate is exposed to the reducing agent for a duration between about 0.25 and about 10 seconds.

7. A method of depositing tungsten in a feature on a substrate, the method comprising:
prior to depositing a bulk tungsten layer, forming a tungsten nucleation layer by exposing the feature to alternating pulses of a dilute reducing agent and tungsten pentachloride.

8. The method of claim 7 , wherein the amount of tungsten deposited per cycle of the alternating pulses is at least about 100 Å.

9. The method of claim 7 , wherein the reducing agent is selected from the group consisting of boranes, silanes, and germanes.

10. The method of claim 7 , wherein the reducing agent is diluted by flowing hydrogen, and the ratio of hydrogen flow rate to reducing agent flow rate is between about 10:1 and about 100:1.

11. The method of claim 7 , further comprising depositing a bulk tungsten layer on the tungsten nucleation layer by chemical vapor deposition using a tungsten-containing precursor.

12. The method of claim 11 , wherein the tungsten-containing precursor is selected from the group consisting of WF 6 , WCl 2 , WCl 4 , WCl 5 , WCl 6 , and mixtures thereof.

13. An apparatus for processing substrates, the apparatus comprising:
(a) at least one process chamber comprising a pedestal configured to hold a substrate;
(b) at least one outlet for coupling to a vacuum;
(c) one or more process gas inlets coupled to one or more process gas sources; and
(d) a controller for controlling operations in the apparatus, comprising machine-readable instructions for:
(i) introducing a reducing agent and hydrogen to the process chamber;
(ii) introducing a fluorine-free tungsten precursor to the process chamber; and
(iii) repeating (i)-(ii) in a first stage to deposit a tungsten nucleation layer,

wherein the ratio of hydrogen flow rate to reducing agent flow rate is between about 10:1 and about 100:1 during (i).

14. The apparatus of claim 13 , wherein the fluorine-free tungsten precursor is selected from the group consisting of WCl 2 , WCl 4 , WCl 5 , WCl 6 , and mixtures thereof.

Assignees

• Lam Res Corp

Inventors

• Bamnolker Hanna
• Humayun Raashina
• Gao Juwen
• Danek Michal
• Collins Joshua

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/056 Primary

  by filling conductive material into holes, grooves or trenches · CPC title