Methods for depositing fluorine/carbon-free conformal tungsten

Patent metadata

Field	Value
Publication number	US-9230815-B2
Application number	US-201314062804-A
Country	US
Kind code	B2
Filing date	Oct 24, 2013
Priority date	Oct 26, 2012
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl 5 or WCl 6 .

First claim

What is claimed is:

1. A processing method comprising:
forming a tungsten containing film comprising sequentially exposing a substrate to a first reactive gas comprising a tungsten-containing compound comprising a compound with the empirical formula W x Cl 5x and a second reactive gas to form a tungsten-containing film having a thickness in the range of about 10 Å to about 30 Å; and
treating the tungsten-containing film by sequential exposure to TiCl 4 and ammonia to deposit less than about 1 Å of titanium nitride.

2. The method of claim 1 , wherein the second reactive gas comprises a hydrogen-containing compound and the tungsten-containing film is a tungsten film.

3. The method of claim 1 , wherein the second reactive gas comprises a nitrogen-containing compound and the tungsten-containing film comprises tungsten nitride.

4. The method of claim 1 , wherein the second reactive gas comprises a silicon-containing compound and the tungsten-containing film comprises tungsten silicide (WSi x ).

5. The method of claim 4 , wherein the second reactive gas further comprises hydrogen.

6. The method of claim 1 , wherein the second reactive gas comprises a mixture of a silicon-containing compound and a nitrogen-containing compound and the tungsten-containing film comprises tungsten-silicon-nitride (WSi x N y ).

7. The method of claim 1 , wherein the substrate is maintained at a temperature less than about 475° C.

8. The method of claim 2 , wherein the tungsten-containing film consists essentially of tungsten.

9. The method of claim 8 , wherein the substrate comprises a work function metal.

10. The method of claim 8 , wherein there is no intervening layer between the work function metal and the film consisting essentially of tungsten.

11. The method of claim 8 , wherein there is an intervening layer between the work function metal and the film consisting essentially of tungsten, the intervening layer having a thickness of less than about 5 Angstroms.

12. A processing method comprising
positioning a substrate in a processing chamber;
sequentially exposing at least a portion of the substrate to a first reactive gas and a second reactive gas at a temperature less than or equal to about 475° C. to form a tungsten-containing film having a thickness in the range of about 10 Å to about 30 Å, the first reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula W x Cl 5x or tungsten hexachloride;
depositing a TiN film having a thickness less than about 1 Å on the tungsten-containing film; and
optionally repeating formation of a tungsten-containing film on the TiN film.

13. The method of claim 12 , wherein the second reactive gas comprises a hydrogen-containing compound and the tungsten-containing film is a tungsten film.

14. The method of claim 12 , wherein the second reactive gas comprises a nitrogen-containing compound and the tungsten-containing film comprises tungsten nitride.

15. The method of claim 12 , wherein the second reactive gas comprises a silicon-containing compound and the tungsten-containing film comprises tungsten silicide (WSi x ).

16. The method of claim 15 , wherein the second reactive gas further comprises hydrogen.

17. The method of claim 12 , wherein the second reactive gas comprises a mixture of a silicon-containing compound and a nitrogen-containing compound and the tungsten-containing film comprises tungsten-silicon-nitride (WSi x N y ).

18. The method of claim 12 , wherein prior to deposition of the tungsten-containing film, the substrate comprises a metallic layer.

19. The method of claim 12 , wherein prior to deposition of the tungsten-containing film, the substrate comprises an oxide layer and the method further comprises soaking the substrate with disilane or a mixture of hydrogen and silane at a partial pressure in the range of about 5 to about 20 Torr.

20. The method of claim 12 , wherein the tungsten containing film grows at a rate in the range of about 0.2 Å/cycle and about 3 Å/cycle.

Assignees

• Applied Materials Inc
• Appled Materials Inc

Inventors

• Fu Xinyu
• Gandikota Srinivas
• Gelatos Avgerinos V
• Noori Atif
• Chang Mei
• Thompson David
• Ghanayem Steve G

Classifications

• H10P14/414

  of metal-silicide materials · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/40 Primary

  of conductive or resistive materials · CPC title

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title