Minimal contact edge ring for rapid thermal processing

Patent metadata

Field	Value
Publication number	US-9558982-B2
Application number	US-201314030728-A
Country	US
Kind code	B2
Filing date	Sep 18, 2013
Priority date	Oct 24, 2012
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate.

First claim

The invention claimed is:

1. A substrate support ring, comprising
a ring body;
an edge lip that extends radially from a surface of the ring body; and
a substrate support that extends upwardly from a top surface of the edge lip, wherein the substrate support is a continuous ring-shaped body disposed along a circumference of the edge lip, and the substrate support comprises a substrate contact surface having a radial width of about 5 μm to about 200 μm.

2. The substrate support ring of claim 1 , wherein the substrate support has a height of about 0.5 mm to about 3 mm.

3. The substrate support ring of claim 1 , wherein the substrate contact surface has a shape selected from the group consisting of hemispherical, rhombus, and triangular.

4. The substrate support ring of claim 1 , wherein the radial width is about 50 μm.

5. A substrate support ring, comprising:
an inner ring;
an outer ring that connects to an outer perimeter of the inner ring through a flat portion;
an edge lip that extends radially from an inner perimeter of the inner ring to form a supporting ledge; and
a substrate support that extends upwardly from a top surface of the supporting ledge, wherein the substrate support is a continuous ring-shaped body disposed around a circumference of the supporting ledge, wherein the substrate support comprises silicon carbide and the substrate support is coated with a layer of silicon dioxide, and the substrate support comprises a substrate contact surface having a radial width of about 5 μm to about 200 μm.

6. The substrate support ring of claim 5 , wherein the flat portion extends radially from an inner perimeter of the outer ring to the outer perimeter of the inner ring.

7. The substrate support ring of claim 6 , wherein the inner ring has a height of about 0 mm to about 3 mm.

8. The substrate support ring of claim 5 , wherein the substrate contact surface has a shape selected from the group consisting of hemispherical, rhombus, and triangular.

9. The substrate support ring of claim 8 , wherein the substrate contact surface has a hemispherical shape.

10. The substrate support ring of claim 5 , wherein the substrate support has a height of about 0.5 mm to about 3 mm.

11. The substrate support ring of claim 5 , wherein the radial width is about 50 μm.

12. A substrate support ring, comprising:
an inner ring;
an outer ring that connects to an outer perimeter of the inner ring through a flat portion;
an edge lip that extends radially from an inner perimeter of the inner ring to form a supporting ledge; and
a substrate support that extends upwardly from a top surface of the supporting ledge, wherein the substrate support is a continuous ring-shaped body disposed around a circumference of the supporting ledge, wherein the substrate support comprises silicon carbide and the substrate support is coated with a layer of polycrystalline silicon, and wherein the substrate support provides a substrate contact surface having a radial width of about 5 μm to about 200 μm.

13. The substrate support ring of claim 12 , wherein the edge lip has a width of between about 15 mm to about 40 mm.

14. The substrate support ring of claim 13 , wherein the edge lip extends radially beneath a substrate to be supported by the substrate support of about 0.5 mm to about 5.0 mm measured from an edge of the edge lip.

15. The substrate support ring of claim 14 , wherein the substrate support has a height of about 0.5 mm to about 3 mm.

Assignees

• Applied Materials Inc

Inventors

• Pan Heng
• Tallavarjula Sairaju
• Bautista Kevin J
• Tobin Jeffrey

Classifications

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H10P72/74 Primary

  using temporarily an auxiliary support · CPC title

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title