Method of modifying electrostatic chuck and plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-9558919-B2
Application number	US-201314100235-A
Country	US
Kind code	B2
Filing date	Dec 9, 2013
Priority date	Dec 12, 2012
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

A method of modifying an electrostatic chuck that electrostatically attracts a processing object is provided. The method includes a gas supplying step of supplying a gas containing hydrogen (H) and oxygen (O) into a chamber accommodating the electrostatic chuck having a surface that is fluorinated; and a modifying step of turning the gas supplied to the chamber into plasma using a high frequency power, exposing the electrostatic chuck to the plasma, and modifying the fluorinated surface of the electrostatic chuck.

First claim

What is claimed is:

1. A method of modifying an electrostatic chuck that electrostatically attracts a processing object, the method comprising:
a gas supplying step of supplying a gas containing hydrogen (H) and oxygen (O) into a chamber accommodating the electrostatic chuck having a surface that is fluorinated; and
a modifying step of turning the gas supplied to the chamber into plasma using a radio frequency power, exposing the electrostatic chuck to the plasma, and modifying the fluorinated surface of the electrostatic chuck.

2. The method as claimed in claim 1 , further comprising:
a cleaning step of executing waferless dry cleaning of the chamber using a cleaning gas containing a fluorine-based gas, the cleaning step being executed before or after the modifying step.

3. The method as claimed in claim 1 , wherein the gas supplied to the chamber in the gas supplying step includes hydrogen bromide (HBr) gas and oxygen (O 2 ) gas.

4. The method as claimed in claim 3 , wherein a flow rate ratio of the oxygen gas with respect to the hydrogen bromide gas of the gas supplied to the chamber in the gas supplying step is equal to a value within a range from 1/99 to 1/49.

5. The method as claimed in claim 2 , wherein a magnetic flux density of a magnetic field generated during the modifying step by a magnetic field generating mechanism arranged near the chamber is adjusted to be higher than a magnetic flux density of a magnetic field generated by the magnetic field generating mechanism during the cleaning step.

6. The method as claimed in claim 1 , wherein the electrostatic chuck includes yttrium oxide (Y 2 O 3 ) that is fluorinated at the surface of the electrostatic chuck.

7. The method as claimed in claim 1 , wherein the hydrogen (H) supplied to the chamber in the gas supplying step bonds with fluorine (F) on the surface of the electrostatic chuck, and the oxygen (O) supplied to the chamber in the gas supplying step oxidizes the surface of the electrostatic chuck.

8. The method as claimed in claim 1 , wherein the modifying step is executed with respect to every lot.

Assignees

• Tokyo Electron Ltd

Inventors

• Kondo Takamitsu
• Shimogama Shingo

Classifications

• H10P72/70 Primary

  for supporting or gripping · CPC title

• H01J37/3266

  Magnetic control means · CPC title

• H01J37/32697 Primary

  Electrostatic control · CPC title

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J37/32715

  Workpiece holder · CPC title