Monomer, hardmask composition including monomer, and method for forming pattern by using hardmask composition

Patent metadata

Field	Value
Publication number	US-9556094-B2
Application number	US-201314441241-A
Country	US
Kind code	B2
Filing date	Jun 4, 2013
Priority date	Dec 26, 2012
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition.

In the above Chemical Formula 1,
A 1 to A 3 , X 1 to X 3 , L 1 , L 2 , n and m are the same as described in the detailed description.

First claim

The invention claimed is:

1. A monomer for a hardmask composition, the monomer being represented by the following Chemical Formula 1:

wherein, in the above Chemical Formula 1,
A 1 to A 3 are each independently a substituted or unsubstituted aliphatic or aromatic cyclic group, wherein at least one of A 1 to A 3 is a polycyclic aromatic group;
X 1 to X 3 are each independently hydrogen, a hydroxy group, a substituted or unsubstituted amino group, a halogen atom, a halogen-containing group, or a combination thereof,
L 1 and L 2 are each independently a single bond or a substituted or unsubstituted C1 to C6 alkylene group,
n is an integer ranging from 2 to 5, and
m is an integer ranging from 1 to 3.

2. The monomer as claimed in claim 1 , wherein A 1 to A 3 are each independently a substituted or unsubstituted aliphatic or aromatic cyclic group selected from the following Group 1:

wherein, in the Group 1,
Z 1 and Z 2 are each independently a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C2 to C20 heteroarylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, C═O, NR a , oxygen (O), sulfur (S), or a combination thereof, wherein R a is hydrogen, a substituted or unsubstituted C1 to C 10 alkyl group, a halogen atom, or a combination thereof, and
Z 3 to Z 17 are independently C═O, NR a , oxygen (O), sulfur (S), CR b R c , or a combination thereof, wherein R a to R c are each independently hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, a halogen-containing group, or a combination thereof.

3. The monomer as claimed in claim 1 , wherein A 1 and A 3 are each independently a benzene group, a naphthalene group, a biphenyl group, or a pyrene group, and
A 2 is a pyrene group, a perylene group, a benzoperylene group, or a coronene group.

4. The monomer as claimed in claim 1 , the monomer being represented by the following Chemical Formula 2 or 3:

wherein, in the above Chemical Formula 2 and 3,
A 1 to A 3 and X 1 to X 3 are each independently defined the same as those of Chemical Formula 1.

5. The monomer as claimed in claim 4 , the monomer being represented by one selected from the following Chemical Formulae 4 to 14:

6. The monomer as claimed in claim 1 , wherein the monomer has a molecular weight of 500 to 5,000.

7. A hardmask composition, comprising
a monomer represented by the following Chemical Formula 1, and
a solvent:

wherein, in the above Chemical Formula 1,
A 1 to A 3 are each independently a substituted or unsubstituted cyclic group, wherein at least one of the A 1 to A 3 is a polycyclic aromatic group,
X 1 to X 3 are each independently hydrogen, a hydroxy group, a substituted or unsubstituted amino group, a halogen atom, a halogen-containing group, or a combination thereof,
L 1 and L 2 are each independently a single bond or a substituted or unsubstituted C1 to C6 alkylene group,
n is an integer ranging from 2 to 5, and
m is an integer ranging from 1 to 3.

8. The hardmask composition as claimed in claim 7 , wherein A 1 to A 3 are each independently a substituted or unsubstituted aliphatic or aromatic cyclic group selected from the following Group 1:

wherein, in the Group 1,
Z 1 and Z 2 are each independently a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C2 to C20 heteroarylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, C═O, NR a , oxygen (O), sulfur (S), or a combination thereof, wherein le is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, or a combination thereof, and
Z 3 to Z 17 are independently C═O, NR a , oxygen (O), sulfur (S), CR b R c ' or a combination thereof, wherein R a to R c are each independently hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, a halogen-containing group, or a combination thereof.

9. The hardmask composition as claimed in claim 7 , wherein A 1 and A 3 are each independently a benzene group, a naphthalene group, biphenyl group or a pyrene group, and
A 2 is a pyrene group, a perylene group, a benzoperylene group, or a coronene group.

10. The hardmask composition as claimed in claim 7 , wherein the monomer is represented by the following Chemical Formula 2 or 3:

wherein, in the above Chemical Formula 2 and 3,
A 1 to A 3 and X 1 to X 3 are each independently defined the same as those in Chemical Formula 1.

11. The hardmask composition as claimed in claim 10 , wherein the monomer is represented by one selected from the following Chemical Formulae 4 to 14:

12. The hardmask composition as claimed in claim 7 , wherein the monomer has a molecular weight of 500 to 5,000.

13. The hardmask composition as claimed in claim 7 , wherein the monomer is included in an amount of 0.1 to 50 wt% based on the total amount of the hardmask composition.

14. A method of forming patterns, comprising
providing a material layer on a substrate,
applying the hardmask composition as claimed in claim 7 on the material layer,
heat-treating the hardmask composition to form a hardmask layer,
forming a silicon-containing thin layer on the hardmask layer,
forming a photoresist layer on the silicon-containing thin layer,
exposing and developing the photoresist layer to form a photoresist pattern
selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer, and
etching an exposed part of the material layer.

Assignees

• Cheil Ind Inc
• Cheil Ind Inc

Inventors

• Kim Yun-Jun
• Kwon Hyo-Young
• Kim Hea-Jung
• Lee Chung-Heon
• Cho Youn-Jin
• Choi Yoo-Jeong

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H01L21/02282

  Electricity · mapped topic