Substrate separation device and substrate separation system

Patent metadata

Field	Value
Publication number	US-9553009-B2
Application number	US-201414522937-A
Country	US
Kind code	B2
Filing date	Oct 24, 2014
Priority date	Mar 25, 2014
Publication date	Jan 24, 2017
Grant date	Jan 24, 2017

Abstract

There is provided a substrate separation device and method for separating a growth substrate from a laminate structure which includes a support substrate, a semiconductor layer, and the growth substrate. The device includes: a first base which is configured to hold the laminate structure thereon, and includes a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure and a heating unit configured to heat the laminate structure; and a second base including a second holding unit disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure.

First claim

What is claimed is:

1. A substrate separation device for separating a growth substrate from a laminate structure including a support substrate, a semiconductor layer, and the growth substrate, the substrate separation device comprising:
a first base which is configured to hold the laminate structure thereon, and comprises:
a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure; and
a heating unit configured to heat the laminate structure;

a second base comprising a second holding unit which is disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure; and
a receiving unit configured to receive the growth substrate separated from the laminate structure, the receiving unit comprising a support frame and a moving plate fastened to the support frame such that the moving plate reciprocates,
wherein the moving plate is positionable below the second holding unit and configured to receive, from the second holding unit, a release of the growth substrate separated from the laminate structure.

2. The substrate separation device of claim 1 , wherein the first holding unit and the second holding unit are configured to selectively hold the support substrate and the growth substrate through vacuum adsorption, respectively.

3. The substrate separation device of claim 1 , wherein the first holding unit includes a body on which the laminate structure is disposed, a plurality of vacuum nozzles exposed to a surface of the body, and a pump connected to the plurality of vacuum nozzles.

4. The substrate separation device of claim 1 , wherein the second holding unit comprises:
a vacuum pad configured to contact the growth substrate;
nozzles exposed to a surface of the vacuum pad; and
a pump connected to the nozzles.

5. The substrate separation device of claim 1 , wherein the second base further includes a moving unit connected to the second holding unit and configured to move the second holding unit in a vertical direction.

6. The substrate separation device of claim 5 , wherein the moving unit includes:
a frame unit having a guide fastened to the second holding unit to guide a movement of the second holding unit; and
a driving unit configured to generate driving force enabling the second holding unit to move along the guide from one end of the frame unit.

7. The substrate separation device of claim 1 , further comprising an exhaust unit which is disposed on one side of the first base and configured to outwardly discharge foreign objects generated when the growth substrate is separated.

8. The substrate separation device of claim 1 , wherein the first base further comprises a plurality of lift pins which are provided in the first holding unit and configured to lift up the laminate structure.

9. The substrate separation device of claim 1 , wherein the heating unit is configured to heat the laminate structure to have a temperature ranging from 150° C. to 500° C.

10. The substrate separation device of claim 9 , wherein the heating unit is configured to heat the laminate structure to have a temperature ranging from 200° C. to 280° C.

11. A substrate separation device for separating a growth substrate from a laminate structure including a support substrate, a semiconductor layer, and the growth substrate, the substrate separation device comprising:
a first base which is configured to hold the laminate structure thereon, and comprises:
a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure; and
a heating unit configured to heat the laminate structure;

a second base comprising a second holding unit which is disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure; and
an exhaust unit which is disposed on one side of the first base and configured to outwardly discharge foreign objects generated when the growth substrate is separated,
wherein the exhaust unit comprises:
an exhaust hood open toward the first base;
an exhaust pipe communicating with the exhaust hood; and
an exhaust pump configured to generate an air stream drawing in the foreign objects through the exhaust pipe.

12. A substrate separation device for separating a growth substrate from a laminate structure including a support substrate, a semiconductor layer, and the growth substrate, the substrate separation device comprising:
a first base which is configured to hold the laminate structure thereon, and comprises:
a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure;
a heating unit configured to heat the laminate structure; and
a second base comprising a second holding unit which is disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure; and
an exhaust unit comprising an exhaust hood open toward the first base.

13. The substrate separation device of claim 12 , wherein the exhaust hood is disposed on one side of the first base.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Sim Jae In
• Park Gyeong Seon
• Lim Kyung Ja
• Choi Seung Woo
• Kwon O Hak

Classifications

• H10P72/7442

  Separation by peeling · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/78 Primary

  using vacuum or suction, e.g. Bernoulli chucks · CPC title