Void free tungsten fill in different sized features

Patent metadata

Field	Value
Publication number	US-9548228-B2
Application number	US-201414341646-A
Country	US
Kind code	B2
Filing date	Jul 25, 2014
Priority date	Aug 4, 2009
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

Methods of depositing tungsten in different sized features on a substrate are provided herein. The methods involve depositing a first bulk layer of tungsten in the features, etching the deposited tungsten, depositing a second bulk tungsten, which is interrupted to treat the tungsten after the smaller features are completely filled, and resuming deposition of the second bulk layer after treatment to deposit smaller, smoother tungsten grains into the large features. The methods also involve depositing tungsten in multiple cycles of dep-etch-dep, where each cycle targets a group of similarly sized features using etch chemistry specific for that group, and depositing in groups from smallest sized features to the largest sized features. Deposition using methods described herein produce smaller, smoother grains with void-free fill for a wide range of sized features in a substrate.

First claim

What is claimed is:

1. A method of processing semiconductor substrates, comprising:
(i) providing a substrate comprising features having different size openings including a first feature and a second feature, wherein the first feature is separated and space apart from the second feature, wherein the first feature has a smaller opening than the second feature;
(ii) depositing a first bulk tungsten layer in the features to partially fill the features;
(iii) performing a nonconformal etch of the first bulk tungsten layer to leave an etched tungsten layer in the features, including removing more tungsten from the top of the first feature than in the interior of the first feature;
(iv) depositing a second bulk tungsten layer on the etched tungsten layer; and
(v) after the first feature is completely filled with tungsten and before the second feature is completely filled with tungsten, treating a surface of the second bulk tungsten layer.

2. The method of claim 1 , wherein treating the surface of the second bulk tungsten layer in (v) comprises exposing the substrate to nitrogen.

3. The method of claim 1 , wherein the different size openings comprise openings having diameters between about 1 nm and about 1 micron.

4. The method of claim 1 , wherein the features comprise features having about twenty different size openings.

5. A method of processing semiconductor substrates, comprising:
(i) providing a substrate comprising features having at least one group of smaller features and at least one group of larger features, wherein the smaller features are separated and spaced apart from the larger features;
(ii) depositing a first bulk tungsten layer in the features;
(iii) etching a portion of the first bulk tungsten layer at a first temperature to leave an etched first bulk tungsten layer;
(iv) depositing a second bulk tungsten layer on the etched first bulk tungsten layer to fill the at least one group of smaller features and at least partially fill the at least one group of the larger features;
(v) etching a portion of the second bulk tungsten layer at a second temperature to leave an etched second bulk tungsten layer; and
(vi) depositing a third bulk tungsten layer on the etched second bulk tungsten layer to fill the at least one group of larger features.

6. The method of claim 5 , wherein the first temperature is less than the second temperature.

7. The method of claim 5 , wherein the first temperature is greater than the second temperature.

8. The method of claim 5 , wherein each of the at least one group of smaller features and the at least one group of larger features comprises features having at least one feature size.

9. The method of claim 5 , wherein each of the at least one group of smaller features comprises one feature and each of the at least one group of larger features comprises one feature.

10. The method of claim 5 , wherein the at least one group of smaller features comprise features having an opening between about 1 nm and about 2 nm.

11. The method of claim 5 , wherein the at least one group of larger features comprise features having an opening between about 100 nm to about 1 micron.

12. The method of claim 5 , wherein the largest feature in the at least one group of larger features has a critical dimension at least five times larger than the critical dimension of the largest feature in the at least one group of smaller features.

Assignees

• Lam Res Corp

Inventors

• Chandrashekar Anand
• Humayun Raashina

Classifications

• H10W20/0595

  by using multiple deposition steps separated by etching steps · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title