Wafer-level light emitting diode package and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9543490-B2
Application number	US-201615041907-A
Country	US
Kind code	B2
Filing date	Feb 11, 2016
Priority date	Sep 24, 2010
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

First claim

What is claimed is:

1. A light emitting diode (LED) package, comprising:
first and second light emitting cells, each comprising a first semiconductor layer, an active layer and a second semiconductor layer, wherein the second semiconductor layer and the active layer of each light emitting cell provides a contact region exposing the first semiconductor layer of each of the light emitting cells;
a first protective insulation layer covering a sidewall of each of the light emitting cells;
a connector located arranged on a first side of the light emitting cells and electrically connecting two adjacent light emitting cells to each other;
a first bump arranged on the first side of the light emitting cells and electrically connected to the first semiconductor layer via the contact region of the first light emitting cell;
a second bump arranged on the first side of the light emitting cells and electrically connected to the second semiconductor layer of the second light emitting cell;
a first contact layer arranged on the exposed first semiconductor layer;
a second contact layer arranged on the second semiconductor layer; and
a second protective insulation layer arranged between the first bump and the first contact layer,
wherein the first semiconductor layer comprises a roughened surface, and

wherein each light emitting cell comprises an inclined sidewall.

2. The LED package of claim 1 , wherein the second protective insulation layer covers a periphery of the semiconductor layers.

3. The LED package of claim 1 , wherein the second contact layer comprises a reflective layer.

4. The LED package of claim 1 , wherein the first contact layer further comprises a reflective layer.

5. The LED package of claim 1 , further comprising a third insulation layer covering the first electrode pad and the second electrode pad.

6. The LED package of claim 1 , further comprising a wavelength convertor arranged on a second side of the light emitting cells.

7. The LED package of claim 1 , wherein the first light emitting cell and the second light emitting cell are separated from each other.

8. The LED package of claim 1 , wherein the first protective insulation layer or the second protective insulation layer or the both include a distributed Bragg reflector.

9. The LED package of claim 1 , wherein the first electrode pad and the second electrode pad are located under the second protective insulation layer.

10. The LED package of claim 1 , wherein the second contact layer forms an ohmic contact with the second semiconductor layer.

11. A light emitting diode (LED) module, comprising:
a circuit board;
a LED package arranged on the circuit board; and
a light guide to adjust an orientation angle of light emitted from the LED package,
wherein the LED package includes:
first and second light emitting cells, each light emitting cell comprising a first semiconductor layer, an active layer and a second semiconductor layer and each light emitting cell having contact holes forming through the second semiconductor layer and the active layer and exposing the first semiconductor layer;
a first contact layer contacting with the first semiconductor layer of each light emitting cell;
a second contact layer contacting with the second semiconductor layer of each light emitting cell;
a first electrode pad connected to the first contact layer of the first light emitting cell;
a second electrode pad connected to the second contact layer of the second light emitting cell; and
a connector connecting the second contact layer of the first light emitting cell to the first contact layer of the second light emitting cell so that the first and second light emitting cells are connected in series to each other,

wherein the first contact layer has contact portions contacting with the first semiconductor layer and connecting portion connecting the contact portions to each other such that the contact portions are electrically connected to each other by the connecting portion.

12. The LED module of claim 11 , further comprising a connection pad on the circuit board having a first bump and a second bump, wherein the first bump is electrically connected to the first semiconductor layer of the first light emitting cell and the second bump is electrically connected to the second semiconductor layer of the second light emitting cell.

13. The LED module of claim 11 , further comprising a wavelength convertor between the light guide and the light emitting cell.

14. The LED module of claim 11 , further comprising:
a protective insulation layer covering a sidewall of the light emitting cell the sidewall exposed by the contact holes.

15. The LED module of claim 11 , wherein the circuit board comprises a metal core printed circuit board (MC-PCB), and the LED packages is arranged over the MC-PCB.

16. The LED module of claim 11 , wherein the contact holes are arranged along at least one side surface of the LED package.

17. The LED module of claim 11 , wherein the first contact layer includes a reflective layer.

18. The LED module of claim 11 , wherein the second contact layer includes a reflective layer.

19. The LED module of claim 11 , wherein the second contact layer forms an ohmic contact with the second semiconductor layer.

20. The LED module of claim 11 , wherein each light emitting cell has a inclined sidewall.

Assignees

• Seoul Semiconductor Co Ltd

Inventors

• Seo Won Cheol
• Cho Dae Sung

Classifications

• H01L2933/0033

  Electricity · mapped topic

• H01L2933/0025

  Electricity · mapped topic

• H01L33/38

  Electricity · mapped topic

• H01L33/58

  Electricity · mapped topic

• H01L33/486

  Electricity · mapped topic