Light-emitting device
US-2024097082-A1 · Mar 21, 2024 · US
US9070851B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070851-B2 |
| Application number | US-201113194317-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 29, 2011 |
| Priority date | Sep 24, 2010 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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Official abstract text for this publication.
Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.
Opening claim text (preview).
What is claimed is: 1. A light emitting diode (LED) package, comprising: a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bum…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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