Micro led display panel
US-2024371838-A1 · Nov 7, 2024 · US
US8928052B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928052-B2 |
| Application number | US-92137909-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2009 |
| Priority date | Mar 31, 2008 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Official abstract text for this publication.
An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.
Opening claim text (preview).
The invention claimed is: 1. An optoelectronic semiconductor chip comprising: a semiconductor layer sequence having an active layer provided for generating radiation, the active layer between a layer of a first conductivity type and a layer of a second conductivity type, wherein the layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence, wherein the semiconductor layer sequence contains at least one cutout extending from a rear sid…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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