Optoelectronic semiconductor chip and method for producing same

US8928052B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8928052-B2
Application numberUS-92137909-A
CountryUS
Kind codeB2
Filing dateMar 13, 2009
Priority dateMar 31, 2008
Publication dateJan 6, 2015
Grant dateJan 6, 2015

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.

First claim

Opening claim text (preview).

The invention claimed is: 1. An optoelectronic semiconductor chip comprising: a semiconductor layer sequence having an active layer provided for generating radiation, the active layer between a layer of a first conductivity type and a layer of a second conductivity type, wherein the layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence, wherein the semiconductor layer sequence contains at least one cutout extending from a rear sid…

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What does patent US8928052B2 cover?
An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear…
Who is the assignee on this patent?
Engl Karl, Hoeppel Lutz, Rode Patrick, and 2 more
What technology area does this patent fall under?
Primary CPC classification H10H20/821. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).