Temperature sensor

Patent metadata

Field	Value
Publication number	US-9964451-B2
Application number	US-201314389089-A
Country	US
Kind code	B2
Filing date	Mar 26, 2013
Priority date	Mar 30, 2012
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

Provided is a temperature sensor which does not easily cause a crack in a Ti—Al—N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film 2 , a thin film thermistor portion 3 made of a Ti—Al—N-based thermistor material formed on the insulating film, a pair of pattern electrodes 4 formed on the insulating film with a pair of opposed electrode portions 4 a being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.

First claim

What is claimed is:

1. A temperature sensor comprising:
an insulating film;
a thin film thermistor made of a Ti—Al—N-based thermistor material on the insulating film; and
a pair of pattern electrodes formed on the insulating film with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor,
wherein the pair of the opposed electrode portions covers the entire surface of the thin film thermistor excluding the region between the opposed electrode portions.

2. The temperature sensor according to claim 1 , wherein the pair of opposed electrode portions further expands to the outside of an outer border of the thin film thermistor, and covers the surroundings of the thin film thermistor.

3. The temperature sensor according to claim 1 , wherein the thin film thermistor consists of a metal nitride represented by the general formula: Ti x Al y N z (where 0.70≤y/(x+y)≤0.95, 0.4≤z≤0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Assignees

• Mitsubishi Materials Corp

Inventors

• Tanaka Hiroshi
• Inaba Hitoshi
• Takeshima Kazuta
• Nagatomo Noriaki

Classifications

• G01K7/226 Primary

  using microstructures, e.g. silicon spreading resistance · CPC title

• H01C7/04

  having negative temperature coefficient · CPC title

• H01C7/008

  Thermistors (H01C7/02 - H01C7/06 take precedence) · CPC title

• G01K7/22 Primary

  the element being a non-linear resistance, e.g. thermistor (G01K7/26 takes precedence) · CPC title