Methodology and system for wafer-level testing of MEMS pressure sensors

Patent metadata

Field	Value
Publication number	US-9527731-B2
Application number	US-201414514438-A
Country	US
Kind code	B2
Filing date	Oct 15, 2014
Priority date	Oct 15, 2014
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

A method for testing a plurality of pressure sensors on a device wafer includes placing a diaphragm of one of the pressure sensors on the device wafer in proximity to a nozzle of a test system. A pneumatic pressure stimulus is applied to the diaphragm via an outlet of the nozzle and a cavity pressure is measured within a cavity associated with the pressure sensor in response to application of the pneumatic pressure stimulus. The pneumatic pressure stimulus within the cavity corresponds to the pressure applied to the diaphragm. Methodology is executed to test the strength and/or stiffness of the diaphragm. Additionally, the methodology and test system can be utilized to determine an individual calibration factor for each pressure sensor on the device wafer.

First claim

What is claimed is:

1. A method for testing a plurality of pressure sensors on a device wafer, wherein said pressure sensors are located on a first side of a substrate portion of said device wafer, each of said pressure sensors includes a cavity, a port extends through said substrate portion from a second side of said substrate portion to said first side into said cavity, and said method comprises:
placing a diaphragm of one of said pressure sensors on said device wafer in proximity to a nozzle of a test system;
positioning a seal element surrounding an outlet of said nozzle in contact with said second side of said substrate portion surrounding said port;
applying mechanical force to said seal element to form a pressure seal between said second side of said substrate portion and said seal element;
applying a pneumatic pressure stimulus to said diaphragm via said outlet of said nozzle, wherein said pneumatic pressure stimulus is imposed on said diaphragm via said port and said cavity associated with said one of said pressure sensors; and
measuring a cavity pressure within said cavity in response to said applying said pneumatic pressure stimulus.

2. The method of claim 1 wherein said placing comprises:
retaining said device wafer in said test system such that said device wafer is substantially parallel to an X-Y plane of said test system; and
moving at least one of said nozzle and said device wafer along a Z-axis substantially perpendicular to said X-Y plane to place said diaphragm of one of said pressure sensors in proximity to said nozzle.

3. The method of claim 1 further comprising:
retaining said device wafer in a wafer chuck of said test system such that said device wafer is substantially parallel to an X-Y plane of said test system, wherein said wafer chuck is coupled to a movable X-Y stage of said test system;
indexing said X-Y stage to place successive diaphragms of successive ones of said plurality of pressure sensors in proximity to said nozzle; and
performing said applying said pneumatic pressure stimulus operation and said measuring operation for each of said successive ones of said plurality of pressure sensors.

4. The method of claim 1 further comprising performing said measuring operation while said port into said cavity remains sealed.

5. The method of claim 1 wherein each of said plurality of pressure sensors has a maximum pressure rating, and said applying operation applies said pneumatic pressure stimulus having a magnitude that is at least equivalent to said maximum pressure rating.

6. The method of claim 1 wherein following said measuring operation, said method further comprises identifying said pressure sensor as a defective sensor when said cavity pressure is outside of a passing range defined by at least one of a low pressure threshold and a high pressure threshold.

7. The method of claim 6 further comprising:
performing said placing, applying said pneumatic pressure stimulus, and measuring operations for each of said plurality of pressure sensors on said device wafer;
identifying a first subset of said pressure sensors on said device wafer as being defective sensors when said cavity pressure for each of said pressure sensors in said first subset is outside of said passing range;
identifying a second subset of said pressure sensors on said device wafer as being functional sensors when said cavity pressure of each of said pressure sensors in said second subset is within said passing range;
dicing said device wafer to produce a plurality of singulated pressure sensors; and
discarding said first subset of said pressure sensors following said dicing.

8. The method of claim 1 further comprising:
performing said placing, applying said pneumatic pressure stimulus, and measuring operations for each of said plurality of pressure sensors on said device wafer, wherein:
for said each of said plurality of pressure sensors, said applying said pneumatic pressure stimulus comprises applying successively greater magnitudes of said pneumatic pressure stimulus; and
for said each of said plurality of pressure sensors, said measuring comprises identifying a failure pressure, said failure pressure being one of said successively greater magnitudes of said pneumatic pressure stimulus at which said cavity pressure is outside of a passing range defined by at least one of a low pressure threshold and a high pressure threshold.

9. The method of claim 8 wherein said device wafer is a first device wafer, and said method further comprises:
producing a substrate map of said first device wafer, said substrate map correlating those of said pressure sensors at locations on said first device wafer as having a same one of said failure pressure; and
categorizing a second plurality of pressure sensors on a second device wafer according to said failure pressure provided in said substrate map for said first device wafer.

10. The method of claim 1 further comprising:
measuring at least one output pressure signal from said pressure sensor in response to said pneumatic pressure stimulus; and
determining a calibration factor for said pressure sensor in response to said at least one output pressure signal.

11. A method for testing a plurality of pressure sensors located on a first side of a substrate portion of a device wafer, each of said pressure sensors including a diaphragm and a cavity, said diaphragm being formed in at least one wall surrounding said cavity, a port extends through said substrate portion from a second side of said substrate portion to said first side into said cavity, and said method comprises:
retaining said device wafer in a wafer chuck of a test system such that said device wafer is substantially parallel to an X-Y plane of said test system, wherein said device wafer chuck is coupled to a movable X-Y stage;
indexing said X-Y stage to place one of said plurality of pressure sensors in proximity to a nozzle of said test system;
moving at least one of said nozzle and said device wafer along a Z-axis substantially perpendicular to said X-Y plane to position said diaphragm of said one of said pressure sensors in proximity to said nozzle;
sealing said cavity associated with said one of said pressure sensors, said sealing including positioning a seal element surrounding an outlet of said nozzle in contact with a second side of said substrate portion surrounding said port and applying mechanical force to said seal element to form a pressure seal between said second side of said substrate portion and said seal element to thereby seal said cavity;
applying a pneumatic pressure stimulus from an outlet of said nozzle to said diaphragm via said cavity, said applying occurring following said sealing, wherein said pneumatic pressure stimulus is imposed on said diaphragm via said port and said cavity associated with said one of said pressure sensors; and
measuring a cavity pressure within said cavity in response to said applying said pneumatic pressure stimulus, said measuring occurring while a port into said cavity remains sealed.

12. The method of claim 11 further comprising:
performing said indexing, moving, sealing, applying, and measuring operations for each of said plurality of pressure sensors on said device wafer;
identifying a first subset of said pressure sensors on said device wafer as being defective sensors when said cavity pressure for each of said pressure sensors in said first subset is outside of a passing range defined by at least one of a low pressure threshold and a high pressure threshold;
identifying a second subset of said pressure sensors on said device wafer as being functional sensors when said cavity pressure of each o

Assignees

• Freescale Semiconductor Inc
• Nxp Usa Inc

Inventors

• Debeurre Bruno J
• Jones Peter T
• Mcwhorter William D
• Sessego Raimondo P

Classifications

• B81C99/004 Primary

  during manufacturing · CPC title

• B81C99/007

  Marking · CPC title

• B81C99/005

  Test apparatus · CPC title

• G01L27/005

  Apparatus for calibrating pressure sensors · CPC title