Wafer susceptor with improved thermal characteristics

Patent metadata

Field	Value
Publication number	US-9517539-B2
Application number	US-201414471772-A
Country	US
Kind code	B2
Filing date	Aug 28, 2014
Priority date	Aug 28, 2014
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A substrate-retaining device with improved thermal uniformity is provided. In an exemplary embodiment, the substrate-retaining device includes a substantially circular first surface with a defined perimeter, a plurality of contact regions disposed at the perimeter, and a plurality of noncontact regions also disposed at the perimeter. The contact regions are interspersed with the noncontact regions. Within each of the noncontact regions, the first surface extends past where the first surface ends within each of the contact regions. In some such embodiments, each region of the plurality of contact regions includes a contact surface disposed above the first surface.

First claim

What is claimed is:

1. A substrate-retaining device comprising:
a substantially circular first surface having a perimeter defined thereupon;
a plurality of contact regions disposed at the perimeter; and
a plurality of noncontact regions disposed at the perimeter and interspersed with the plurality of contact regions,
wherein the contact regions extend above the noncontact regions towards a retained substrate,
wherein the first surface within each of the noncontact regions extends past the first surface within each of the contact regions, and
wherein a contact surface of each of the contact regions is configured to contact an edge of the retained substrate without contacting either of two surfaces of the retained substrate that extend from the edge.

2. The substrate-retaining device of claim 1 , wherein for each contact surface, a portion radially outward is higher than a portion radially inward.

3. The substrate-retaining device of claim 1 further comprising a second surface extending from the first surface in each of the noncontact regions and, within each of the contact regions, extending from the respective contact surface.

4. The substrate-retaining device of claim 3 , wherein the second surface terminates at a vertical location coplanar with a top surface of the retained substrate.

5. The substrate-retaining device of claim 1 , wherein each region of the plurality of contact regions includes:
a vertical surface that extends from the first surface at an angle of about 90° to the contact surface.

6. The substrate-retaining device of claim 5 , wherein for each contact surface, a portion radially outward is higher than a portion radially inward.

7. The substrate-retaining device of claim 1 , wherein each of the plurality of contact regions has an arc length that is substantially equal to an arc length of each of the plurality of non-contact regions.

8. The substrate-retaining device of claim 1 , wherein the first surface is conical having an apex aligned with a center of the retained substrate, and wherein the apex is further from the retained substrate than the perimeter of the first surface is from the retained substrate.

9. A device comprising:
a base portion having a substantially circular first surface and a cylindrical surface extending from the first surface; and
a ring portion disposed within the base portion and having a contact surface defined thereupon,
wherein the contact surface is configured to contact an edge of a substrate without the device contacting any surface of the substrate extending from the edge.

10. The device of claim 9 , wherein the contact surface is curvilinear.

11. The device of claim 9 , wherein the contact surface is planar.

12. The device of claim 9 , wherein the ring portion defines an air gap between the base portion and the ring portion.

13. The device of claim 9 , wherein the base portion includes a material different from a material of the ring portion.

14. A substrate-retaining device comprising:
a non-linear first surface having a perimeter defined thereupon;
a plurality of contact regions disposed at the perimeter; and
a plurality of noncontact regions disposed at the perimeter and interspersed with the plurality of contact regions,
wherein the first surface within each of the noncontact regions extends past the first surface within each of the contact regions, and
wherein each of the contact regions includes a contact surface configured to contact an edge of a retained substrate without the substrate-retaining device contacting a circumferential surface of the retained substrate extending from the edge.

15. The substrate-retaining device of claim 14 , wherein the contact surface of each region of the plurality of contact regions is disposed above the first surface.

16. The substrate-retaining device of claim 15 further comprising a second surface extending from the first surface in each of the noncontact regions and, within each of the contact regions, extending from the respective contact surface.

17. The substrate-retaining device of claim 16 , wherein the second surface terminates at a vertical location coplanar with a top surface of a retained substrate.

18. The substrate-retaining device of claim 14 , wherein each region of the plurality of contact regions includes:
a second surface that extends from the first surface at an angle of about 90° to the contact surface.

19. The substrate-retaining device of claim 15 , wherein each of the plurality of contact regions has an arc length that is substantially equal to an arc length of each of the plurality of non-contact regions.

20. The substrate-retaining device of claim 16 , wherein the contact surface of each of the contact regions is sloped upward towards the retained substrate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lin Yi-Hung
• Li Jr-Hung
• Lu Chang-Shen
• Lee Tze-Liang
• Li Chii-Horng

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/7606

  characterised by edge clamping, e.g. clamping ring · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0434

  mainly by convection · CPC title