CMOS gate stack structures and processes

Patent metadata

Field	Value
Publication number	US-9508728-B2
Application number	US-201615003151-A
Country	US
Kind code	B2
Filing date	Jan 21, 2016
Priority date	Jun 6, 2011
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A semiconductor device includes a substrate having a semiconducting surface having formed therein a first active region and a second active region, where the first active region consists of a substantially undoped layer at the surface and a highly doped screening layer of a first conductivity type beneath the first substantially undoped layer, and the second active region consists of a second substantially undoped layer at the surface and a second highly doped screening layer of a second conductivity type beneath the second substantially undoped layer. The semiconductor device also includes a gate stack formed in each of the first active region and the second active region consists of at least one gate dielectric layer and a layer of a metal, where the metal has a workfunction that is substantially midgap with respect to the semiconducting surface.

First claim

What is claimed is:

1. A semiconductor device integrated circuit comprising:
a first device for SRAM comprising a first substantially undoped layer at a semiconductor surface, a first highly doped screening layer of a first conductivity type beneath the first substantially undoped layer, a first well of the first conductivity type beneath the first highly doped screening layer and a first gate stack on the first substantially undoped layer,
a second device for SRAM comprising a second substantially undoped layer at the semiconductor surface, a second highly doped screening layer of a second conductivity type beneath the second substantially undoped layer, a second well of the second conductivity type beneath the second highly doped screening layer and a second gate stack on the second substantially undoped layer,
a third device for logic comprising a third substantially undoped layer at the semiconductor surface, a third highly doped screening layer of a first conductivity type beneath the third substantially undoped layer, a third well of the first conductivity type beneath the third highly doped screening layer and a third gate stack on the third substantially undoped layer,
a fourth device for logic comprising a fourth substantially undoped layer at the semiconductor surface, a fourth highly doped screening layer of a second conductivity type beneath the fourth substantially undoped layer, a fourth well of the second conductivity type beneath the fourth highly doped screening layer and a fourth gate stack on the fourth substantially undoped layer,
shallow trench isolation regions separating the first device, the second device, the third deice and the fourth device,
wherein each of the first gate stack, the second gate stack, the third gate stack and the fourth gate stack has a workfunction that is substantially midgap with respect to the semiconductor material.

2. The semiconductor device integrated circuit of claim 1 , wherein the first gate stack comprises a first metal having a workfunction that is substantially midgap with respect to the semiconductor material.

3. The semiconductor device integrated circuit of claim 1 , wherein at least one of the first gate stack and the second gate stack comprises a capping layer.

4. The semiconductor device integrated circuit of claim 2 , wherein the second gate stack comprises a second metal having a workfunction that is substantially midgap with respect to the semiconductor material, wherein the workfunction of the first metal and the workfunction of the second metal are not equal in value.

5. The semiconductor device integrated circuit of claim 2 , wherein each of the first gate stack, the second gate stack, the third gate stack and the fourth gate stack comprises a gate dielectric layer, at least one of the gate dielectric layer comprises a high-K dielectric layer, and wherein the first metal comprises at least one of TiN, TaN, WN, Al, Ti, or any alloys thereof.

6. The semiconductor device integrated circuit of claim 1 , further comprising a layer of an alloy of silicon and germanium at the surface in at least one of the third active region and the fourth active region.

7. The semiconductor device integrated circuit of claim 1 , further comprising a halo layer in the third active region and the fourth active region and not in the first active region or the second active region.

Assignees

• Mie Fujitsu Semiconductor Ltd

Inventors

• Hoffmann Thomas
• Ranade Pushkar
• Thompson Scott E

Classifications

• H10D84/0188

  Manufacturing their isolation regions · CPC title

• H10D84/0177

  the gate conductors having different materials or different implants · CPC title

• H10D84/0172

  Manufacturing their gate conductors · CPC title

• H10D84/0167

  Manufacturing their channels · CPC title

• H10D84/85 Primary

  Complementary IGFETs, e.g. CMOS · CPC title