Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9508546-B2
Application number	US-201414566989-A
Country	US
Kind code	B2
Filing date	Dec 11, 2014
Priority date	Jan 31, 2014
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a process chamber;
(b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber;
(c) unloading the substrate from the process chamber; and
(d) cleaning the buffer chamber and the process chamber after performing the step (c),
wherein the step (d) comprises:
(d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and
(d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit.

Assignees

• Hitachi Int Electric Inc

Inventors

• Toyoda Kazuyuki
• Takasaki Tadashi
• Ashihara Hiroshi
• Sano Atsushi
• Akae Naonori
• Yanai Hidehiro

Classifications

• H10P14/6328 Primary

  Deposition from the gas or vapour phase · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/4557

  Heated nozzles · CPC title

• H01J37/32577

  Electrical connecting means · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title