Methods of providing dielectric to conductor adhesion in package structures

US9136221B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9136221-B2
Application numberUS-201213630500-A
CountryUS
Kind codeB2
Filing dateSep 28, 2012
Priority dateSep 28, 2012
Publication dateSep 15, 2015
Grant dateSep 15, 2015

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Abstract

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Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a CVD dielectric material on a package dielectric material, and then forming a conductive material on the CVD dielectric material.

First claim

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What is claimed is: 1. A package structure comprising: a first CVD dielectric glue material disposed on a first dielectric build up material of a package structure wherein the first CVD dielectric glue material is a different material than the first dielectric build up material; a first opening formed through the first CVD dielectric glue material and through the first dielectric build up material; and a conductive material disposed on the first CVD dielectric glue material an…

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What does patent US9136221B2 cover?
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a CVD dielectric material on a package dielectric material, and then forming a conductive material on the CVD dielectric material.
Who is the assignee on this patent?
Intel Corp
What technology area does this patent fall under?
Primary CPC classification H10W70/685. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).