High density microwave plasma generation apparatus, and magnetron sputtering deposition system using the same

Patent metadata

Field	Value
Publication number	US-9506142-B2
Application number	US-201313913643-A
Country	US
Kind code	B2
Filing date	Jun 10, 2013
Priority date	Apr 28, 2011
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A microwave plasma generation apparatus ( 4 ) includes: a rectangular waveguide ( 41 ) that transmits a microwave; a slot antenna ( 42 ) that has a slot ( 420 ) through which the microwave passes; and a dielectric portion ( 43 ) that is arranged so as to cover the slot ( 420 ) and of which a plasma generating region-side front face is parallel to an incident direction in which the microwave enters from the slot ( 420 ). The microwave plasma generation apparatus ( 4 ) is able to generate microwave plasma (P 1 ) under a low pressure of lower than or equal to 1 Pa. A magnetron sputtering deposition system ( 1 ) includes the microwave plasma generation apparatus ( 4 ), and carries out film deposition using magnetron plasma (P 2 ) while radiating microwave plasma (P 1 ) between a base material ( 20 ) and a target ( 30 ). With the magnetron sputtering deposition system ( 1 ), it is possible to form a thin film having small asperities on its surface.

First claim

The invention claimed is:

1. A microwave plasma generation apparatus that ionizes gas supplied into a vacuum casing to generate microwave plasma, comprising:
a rectangular waveguide that transmits a microwave;
a slot antenna that forms one face of the rectangular waveguide and that has a plurality of slots through which the microwave passes at the one face of the rectangular waveguide, wherein each of the plurality of slots has an oblong hole shape that extends in a longitudinal direction of the rectangular waveguide; and
a single dielectric portion that is arranged in direct physical contact with the slot antenna that forms the one face of the rectangular waveguide, so as to cover the plurality of slots of the slot antenna and so that microwaves having passed through the plurality of slots enter the single dielectric portion in an incident direction, the single dielectric portion having a plasma generating region-side front face parallel to the incident direction and perpendicular to the one face of the rectangular waveguide at which the slot antenna is arranged.

2. The microwave plasma generation apparatus according to claim 1 , wherein the microwave plasma generation apparatus is able to generate the microwave plasma under a pressure of higher than or equal to 0.5 Pa and lower than or equal to 100 Pa.

3. The microwave plasma generation apparatus according to claim 1 , further comprising:
a support plate that is arranged on a back face of the single dielectric portion and that supports the single dielectric portion; and
a permanent magnet that is arranged on a back face of the support plate and that forms a magnetic field in the plasma generating region, wherein
ECR plasma is generated while electron cyclotron resonance (ECR) is generated by the microwave that propagates from the single dielectric portion into the magnetic field.

4. The microwave plasma generation apparatus according to claim 3 , wherein the support plate has cooling means for suppressing an increase in temperature of the permanent magnet.

5. The microwave plasma generation apparatus according to claim 3 , wherein the microwave plasma generation apparatus is able to generate the ECR plasma under a pressure of higher than or equal to 0.05 Pa and lower than or equal to 100 Pa.

6. The microwave plasma generation apparatus according to claim 4 , wherein the microwave plasma generation apparatus is able to generate the ECR plasma under a pressure of higher than or equal to 0.05 Pa and lower than or equal to 100 Pa.

7. A magnetron sputtering deposition system that includes: a base material; a target; and a permanent magnet for forming a magnetic field on a surface of the target, and that sputters the target using plasma generated through magnetron discharge and forms a thin film by causing ejected sputtered particles to adhere to a surface of the base material, the magnetron sputtering deposition system characterized by further comprising:
the microwave plasma generation apparatus according to claim 1 , wherein
the microwave plasma generation apparatus radiates microwave plasma between the base material and the target.

8. The magnetron sputtering deposition system according to claim 7 , wherein formation of the thin film is performed under a pressure of higher than or equal to 0.5 Pa and lower than or equal to 3 Pa.

9. A magnetron sputtering deposition system that includes: a base material; a target; and a permanent magnet for forming a magnetic field on a surface of the target, and that sputters the target using plasma generated through magnetron discharge and forms a thin film by causing ejected sputtered particles to adhere to a surface of the base material, the magnetron sputtering deposition system further comprising:
the microwave plasma generation apparatus according to claim 3 , wherein
the microwave plasma generation apparatus radiates ECR plasma between the base material and the target.

10. A magnetron sputtering deposition system that includes: a base material; a target; and a permanent magnet for forming a magnetic field on a surface of the target, and that sputters the target using plasma generated through magnetron discharge and forms a thin film by causing ejected sputtered particles to adhere to a surface of the base material, the magnetron sputtering deposition system further comprising:
the microwave plasma generation apparatus according to claim 4 , wherein
the microwave plasma generation apparatus radiates ECR plasma between the base material and the target.

11. The magnetron sputtering deposition system according to claim 9 , wherein formation of the thin film is performed under a pressure of higher than or equal to 0.05 Pa and lower than or equal to 3 Pa.

12. The magnetron sputtering deposition system according to claim 10 , wherein formation of the thin film is performed under a pressure of higher than or equal to 0.05 Pa and lower than or equal to 3 Pa.

13. The microwave plasma generation apparatus according to claim 1 , wherein
the slot antenna is made of aluminum, a stainless steel, or a brass.

14. The microwave plasma generation apparatus according to claim 1 , wherein
the single dielectric portion is made of quartz or aluminum oxide.

Assignees

• Tokai Rubber Ind Ltd
• Nat'L Univ Corp Nagoya Univ
• Sumitomo Riko Co Ltd
• Nat Univ Corp Nagoya Univ

Inventors

• Sasai Kensuke
• Toyoda Hirotaka

Classifications

• H01J37/32678

  Electron cyclotron resonance · CPC title

• C23C14/357 Primary

  Microwaves, e.g. electron cyclotron resonance enhanced sputtering · CPC title

• H05H1/46

  using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title

• H01J37/3405

  Magnetron sputtering · CPC title

• H01J37/32229

  Waveguides · CPC title