Method for vapor depositing a substrate

Patent metadata

Field	Value
Publication number	US-11293090-B2
Application number	US-201816338133-A
Country	US
Kind code	B2
Filing date	Sep 6, 2018
Priority date	Dec 14, 2017
Publication date	Apr 5, 2022
Grant date	Apr 5, 2022

Abstract

The present disclosure relates to the field of vapor deposition technologies, and discloses a vapor deposition method. The vapor deposition method includes: applying an exciting acoustic wave to the target, such that particles in a predetermined location of the target break away from the target and adhere to a predetermined region of the substrate when an energy of the particles is higher than an energy required for the particles to break away from the target. By using the vapor deposition method, losses of vapor deposition materials may be avoided, utilization of the vapor deposition materials may be increased, and thus costs may be reduced.

First claim

What is claimed is:

1. A vapor deposition method comprising:
providing a target;
providing a substrate, the substrate configured to receive particles from the target; and
applying an exciting acoustic wave to the target, such that the particles in a predetermined location of the target break away from the target and adhere to a predetermined region of the substrate when an energy of the particles is higher than an energy required for the particles to break away from the target,
wherein the exciting acoustic wave is a rectangular standing wave, and the rectangular standing wave is synthesized using a plurality of sine waves or a plurality of cosine waves,
wherein synthesizing the rectangular standing wave comprises:
partitioning the target into a plurality of periodic units according to a vapor deposition requirement of the substrate, a function of the rectangular standing wave being expressed as:

f
⁡

(
x
)

=

a
0

2

+

∑
1
∞

⁢

a
n

⁢

cos
⁡

(

nx
L

)

,

wherein a 0 represents an amplitude of the rectangular standing wave, a n represents an amplitude of the sine wave or an amplitude of the cosine wave, n represents a number of the sine waves or a number of the cosine waves, and L represents a width of the periodic unit.

2. The vapor deposition method according to claim 1 , wherein a wavelength value of the sine wave and a wavelength value of the cosine wave are within a wavelength value range of an ultrasonic wave.

3. The vapor deposition method according to claim 1 , wherein before applying an exciting acoustic wave to the target, the vapor deposition method further comprises:
heating the target, such that an energy of the target is lower than the energy required for the particles to break away from the target.

4. The vapor deposition method according to claim 3 , wherein a temperature for heating the target ranges from 400° C. to 500° C.

Assignees

• Beijing Boe Display Tech Co
• Boe Technology Group Co Ltd

Inventors

• Wan Jiyu
• Wang Dong
• Song Yongzhi
• Jiang Jingjing
• Qi Pengyu

Classifications

• C23C14/3421

  using heated targets · CPC title

• C03C2218/154

  by sputtering · CPC title

• C23C14/28 Primary

  by wave energy or particle radiation (C23C14/32 - C23C14/48 take precedence) · CPC title

• C23C14/357

  Microwaves, e.g. electron cyclotron resonance enhanced sputtering · CPC title

• C23C14/3485

  using pulsed power to the target · CPC title